| Photoelectric plasticity in oxide thin film transistors with tunable synaptic functions Q Wu, J Wang, J Cao, C Lu, G Yang, X Shi, X Chuai, Y Gong, Y Su, ... Advanced Electronic Materials 4 (12), 1800556, 2018 | 131 | 2018 |
| Full imitation of synaptic metaplasticity based on memristor devices Q Wu, H Wang, Q Luo, W Banerjee, J Cao, X Zhang, F Wu, Q Liu, L Li, ... Nanoscale 10 (13), 5875-5881, 2018 | 111 | 2018 |
| Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices Q Wu, W Banerjee, J Cao, Z Ji, L Li, M Liu Applied Physics Letters 113 (2), 2018 | 87 | 2018 |
| Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals G Yang, Y Shao, J Niu, X Ma, C Lu, W Wei, X Chuai, J Wang, J Cao, ... Nature communications 11 (1), 659, 2020 | 29 | 2020 |
| A dual-functional IGZO-based device with Schottky diode rectifying and resistance switching behaviors Q Wu, C Lu, H Wang, J Cao, G Yang, J Wang, Y Gong, X Shi, X Chuai, ... IEEE Electron Device Letters 40 (1), 24-27, 2018 | 27 | 2018 |
| A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications J Cao, S Peng, W Liu, Q Wu, L Li, D Geng, G Yang, Z Ji, N Lu, M Liu Journal of Applied Physics 123 (6), 2018 | 23 | 2018 |
| Single-event latchup in a 7-nm bulk FinFET technology DR Ball, CB Sheets, L Xu, J Cao, SJ Wen, R Fung, C Cazzaniga, ... IEEE Transactions on Nuclear Science 68 (5), 830-834, 2021 | 17 | 2021 |
| Single-event upsets in a 7-nm bulk FinFET technology with analysis of threshold voltage dependence JV D’Amico, DR Ball, J Cao, L Xu, M Rathore, SJ Wen, R Fung, ... IEEE Transactions on Nuclear Science 68 (5), 823-829, 2021 | 14 | 2021 |
| An analytical Seebeck coefficient model for disordered organic semiconductors X Shi, N Lu, G Xu, J Cao, Z Han, G Yang, L Li, M Liu Physics Letters A 381 (40), 3441-3444, 2017 | 14 | 2017 |
| A New Velocity Saturation Model of MoS2 Field-Effect Transistors J Cao, W Liu, Q Wu, G Yang, N Lu, Z Ji, D Geng, L Li, M Liu IEEE Electron Device Letters 39 (6), 893-896, 2018 | 10 | 2018 |
| Temperature dependence of single-event transient pulse widths for 7-nm bulk FinFET technology J Cao, L Xu, SJ Wen, R Fung, B Narasimham, LW Massengill, BL Bhuva 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 9 | 2020 |
| Alpha Particle Soft-Error Rates for D-FF Designs in 16-Nm and 7-Nm Bulk FinFET Technologies J Cao, L Xu, BL Bhuva, SJ Wen, R Wong, B Narasimham, LW Massengill IEEE International Reliability Physics Symposium (IRPS), 2019 | 9 | 2019 |
| SE response of guard-gate FF in 16-and 7-nm bulk FinFET technologies J Cao, L Xu, BL Bhuva, R Fung, SJ Wen, C Cazzaniga, C Frost IEEE Transactions on Nuclear Science 67 (7), 1436-1442, 2020 | 8 | 2020 |
| Total-ionizing-dose effects on polycrystalline-Si channel vertical-charge-trapping NAND devices J Cao, PF Wang, X Li, Z Guo, EX Zhang, RA Reed, ML Alles, RD Schrimpf, ... IEEE Transactions on Nuclear Science 69 (3), 314-320, 2021 | 7 | 2021 |
| Thermal neutron induced soft errors in 7-nm bulk FinFET node L Xu, J Cao, J Brockman, C Cazzaniga, C Frost, SJ Wen, R Fung, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 7 | 2020 |
| Low-frequency and random telegraph noise in 14-nm bulk si charge-trap transistors M Gorchichko, EX Zhang, M Reaz, K Li, PF Wang, J Cao, RM Brewer, ... IEEE Transactions on Electron Devices 70 (6), 3215-3222, 2023 | 4 | 2023 |
| High-Current State triggered by Operating-Frequency Change L Xu, J Cao, SJ Wen, R Fung, J Markevitch, DR Ball, BL Bhuva 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 3 | 2020 |
| Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide J Cao, I Wynocker, EX Zhang, RA Reed, ML Alles, RD Schrimpf, ... IEEE Transactions on Nuclear Science 70 (4), 634-640, 2022 | 2 | 2022 |
| Artificial Synapses: Photoelectric Plasticity in Oxide Thin Film Transistors with Tunable Synaptic Functions (Adv. Electron. Mater. 12/2018) Q Wu, J Wang, J Cao, C Lu, G Yang, X Shi, X Chuai, Y Gong, Y Su, ... Advanced Electronic Materials 4 (12), 1870058, 2018 | 2 | 2018 |
| Single-Event Upset Responses of Dual-and Triple-Well D Flip-Flop Designs in 7-nm Bulk FinFET Technology L Xu, J Cao, BL Bhuva, I Chatterjee, SJ Wen, R Wong, LW Massengill | 1 | 2019 |
Enxia ZhangUniversity of Central Florida在 ucf.edu 的电子邮件经过验证
