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Eunjin Kim
Eunjin Kim
在 knu.ac.kr 的电子邮件经过验证
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High breakdown voltage and low-current dispersion in AlGaN/GaN HEMTs with high-quality AlN buffer layer
JG Kim, C Cho, E Kim, JS Hwang, KH Park, JH Lee
IEEE Transactions on Electron Devices 68 (4), 1513-1517, 2021
652021
A simulation study on the effects of interface charges and geometry on vertical GAA GaN nanowire MOSFET for low-power application
T Thingujam, Q Dai, E Kim, JH Lee
IEEE Access 9, 101447-101453, 2021
82021
Investigation of proton irradiation-enhanced device performances in AlGaN/GaN HEMTs
JG Kim, E Kim, DS Kim, C Cho, JH Lee
IEEE Journal of the Electron Devices Society 10, 19-22, 2021
52021
Threshold voltage modulation of AlGaN/GaN MIS-FinFETs with sub-60 mV/decade subthreshold swing
Q Dai, RH Kim, JH Lee, JG Kim, T Thingujam, SH Kang, WH Ahn, EJ Kim, ...
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
12020
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