| A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process X Chen, S Samavedam, V Narayanan, K Stein, C Hobbs, C Baiocco, W Li, ... 2008 Symposium on VLSI Technology, 88-89, 2008 | 130 | 2008 |
| A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications S Krishnan, U Kwon, N Moumen, MW Stoker, ECT Harley, S Bedell, ... 2011 IEEE International Electron Devices Meeting (IEDM), 28.1.1 - 28.1.4, 2011 | 126 | 2011 |
| 32nm general purpose bulk CMOS technology for high performance applications at low voltage F Arnaud, J Liu, YM Lee, KY Lim, S Kohler, J Chen, BK Moon, CW Lai, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 91 | 2008 |
| Scaling of 32nm low power SRAM with high-K metal gate HS Yang, R Wong, R Hasumi, Y Gao, NS Kim, DH Lee, S Badrudduza, ... Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008 | 66 | 2008 |
| Competitive and cost effective high-k based 28nm CMOS technology for low power applications F Arnaud, A Thean, M Eller, M Lipinski, YW Teh, M Ostermayr, K Kang, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 61 | 2009 |
| Asymmetric channel MOSFET X Chen, J Deng, W Li, DR Nair, JE Park, D Tekleab, X Yuan, NS Kim US Patent 8,237,197, 2012 | 40 | 2012 |
| Method of manufacturing a body-contacted SOI FINFET N Kanike, DR Nair US Patent 8,993,402, 2015 | 30 | 2015 |
| Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters DR Nair, S Mahapatra, S Shukuri, JD Bude IEEE Transactions on Electron Devices 51 (5), 701-707, 2004 | 29 | 2004 |
| Piezoelectric-on-Silicon Array Resonators With Asymmetric Phononic Crystal Tethering U Rawat, DR Nair, A DasGupta Journal of Microelectromechanical Systems 26 (4), 773-781, 2017 | 24 | 2017 |
| Analysis of Gate-Induced Drain Leakage Mechanisms in Silicon-Germanium Channel pFET VA Tiwari, D Jaeger, A Scholze, DR Nair IEEE Transactions on Electron Devices, 61 (5), 1270 - 1277, 2014 | 21 | 2014 |
| A Scalable, Broadband, and Physics-Based Model for On-Chip Rectangular Spiral Inductors SS Jayaraman, V Vanukuru, D Nair, A Chakravorty IEEE Transactions on Magnetics 55 (9), 1-6, 2019 | 19 | 2019 |
| Compact Modeling of Proximity Effect in High- Tapered Spiral Inductors J Sathyasree, V Vanukuru, D Nair, A Chakravorty IEEE Electron Device Letters 39 (4), 588-590, 2018 | 19 | 2018 |
| Study of the Effect of Surface Roughness on the Performance of RF MEMS Capacitive Switches Through 3-D Geometric Modeling S Gopalakrishnan, A Dasgupta, DR Nair IEEE Journal of the Electron Devices Society 4 (6), 451-458, 2016 | 19 | 2016 |
| Novel RF MEMS capacitive switches with design flexibility for multi-frequency operation S Gopalakrishnan, A DasGupta, DR Nair Journal of Micromechanics and Microengineering 27 (9), 095013, 2017 | 18 | 2017 |
| Realization of preferential (100) oriented AlN thin films on Mo coated Si substrate using reactive RF magnetron sputtering A Das, M Rath, DR Nair, MSR Rao, A DasGupta Applied Surface Science 550, 149308, 2021 | 16 | 2021 |
| Oxygen scavenging spacer for a gate electrode MP Chudzik, DR Nair, V Narayanan, CJ Radens, JM Shah US Patent 9,059,211, 2015 | 16 | 2015 |
| CHISEL programming operation of scaled NOR flash EEPROMs-effect of voltage scaling, device scaling and technological parameters NR Mohapatra, DR Nair, S Mahapatra, V Ramgopal Rao, S Shukuri, ... Electron Devices, IEEE Transactions on 50 (10), 2104-2111, 2003 | 14 | 2003 |
| Design, fabrication and characterization of RF MEMS shunt switch for wideband operation of 3 GHz to 30 GHz A Swarnkar, A DasGupta, DR Nair Journal of Micromechanics and Microengineering 29 (11), 115009, 2019 | 13 | 2019 |
| A Substrate Model for On-Chip Tapered Spiral Inductors With Forward and Reverse Excitations J Sathyasree, V Vanukuru, DR Nair, A Chakravorty IEEE Transactions on Electron Devices 66 (1), 802-805, 2018 | 13 | 2018 |
| New layout dependency in high-k/Metal Gate MOSFETs M Hamaguchi, D Nair, D Jaeger, H Nishimura, W Li, MH Na, C Bernicot, ... 2011 IEEE International Electron Devices Meeting (IEDM), 25.6.1 - 25.6.4, 2011 | 12 | 2011 |
