| Controlled silicidation of silicon nanowires using flash lamp annealing MB Khan, S Prucnal, S Ghosh, D Deb, R Hubner, D Pohl, L Rebohle, ... Langmuir 37 (49), 14284-14291, 2021 | 10 | 2021 |
| Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization S Ghosh, MB Khan, P Chava, K Watanabe, T Taniguchi, S Prucnal, ... ACS Applied Materials & Interfaces 15 (34), 40709-40718, 2023 | 5 | 2023 |
| Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing MB Khan, S Ghosh, S Prucnal, T Mauersberger, R Hübner, M Simon, ... 2020 Device Research Conference (DRC), 1-2, 2020 | 2 | 2020 |
| Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application S Ghosh, A Echresh, MB Khan, D Bhattacharya, U Kentsch, S Prucnal, ... 2024 Device Research Conference (DRC), 1-2, 2024 | 1 | 2024 |
| Atomic layer etching of nanowires using conventional reactive ion etching tool MB Khan, S Shakeel, K Richter, S Ghosh, A Erbe, YM Georgiev Journal of Physics: Conference Series 2443 (1), 012004, 2023 | 1 | 2023 |
| Nitrogen Dioxide Detection with Ambipolar Silicon Nanowire Transistor Sensors V Vardhan, S Biswas, S Ghosh, L Tsetseris, S Hellebust, A Echresh, ... ACS Applied Materials & Interfaces, 2025 | | 2025 |
| Pseudo Molecular Doping and Ambipolarity Tuning in Si Junctionless Nanowire Transistors Using Gaseous Nitrogen Dioxide V Vardhan, S Biswas, S Ghosh, L Tsetseris, T Ghoshal, S Hellebust, ... Advanced Electronic Materials, 2400338, 2024 | | 2024 |
| Compact Model of Junctionless Nanowire Transistor for Air-Pollution Sensor G Angelov, M Spasova, V Garistov, D Nikolov, I Ruskova, R Rusev, ... 2023 46th International Spring Seminar on Electronics Technology (ISSE), 1-5, 2023 | | 2023 |
| Fabrication and Electrical Characterization of Top-Gated RFETs S Ghosh Technische Universität Dresden (TUD), Helmholtz-Zentrum Dresden-Rossendorf …, 2020 | | 2020 |
Yordan M. Georgiev, PhDHead of Nanofabrication, I-te of Ion Beam Phys. & Mat. Res., Helmholtz-Centrum Dresden-Rossendorf在 hzdr.de 的电子邮件经过验证
