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Monica Hansen
Monica Hansen
Google Quantum AI, LED Lighting Advisors, UCSB
在 google.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Enhanced Mg doping efficiency in superlattices
P Kozodoy, M Hansen, SP DenBaars, UK Mishra
Applied Physics Letters 74 (24), 3681-3683, 1999
3491999
Indium tin oxide contacts to gallium nitride optoelectronic devices
T Margalith, O Buchinsky, DA Cohen, AC Abare, M Hansen, SP DenBaars, ...
Applied Physics Letters 74 (26), 3930-3932, 1999
3251999
LED lighting efficacy: status and directions
PM Pattison, M Hansen, JY Tsao
Comptes Rendus. Physique 19 (3), 134-145, 2018
2552018
Polarization-enhanced Mg doping of AlGaN/GaN superlattices
P Kozodoy, YP Smorchkova, M Hansen, H Xing, SP DenBaars, UK Mishra, ...
Applied Physics Letters 75 (16), 2444-2446, 1999
2321999
Optically and thermally detected deep levels in n-type Schottky and GaN diodes
A Hierro, D Kwon, SA Ringel, M Hansen, JS Speck, UK Mishra, ...
Applied Physics Letters 76 (21), 3064-3066, 2000
1702000
Hydrogen passivation of deep levels in
A Hierro, SA Ringel, M Hansen, JS Speck, UK Mishra, SP DenBaars
Applied Physics Letters 77 (10), 1499-1501, 2000
1612000
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
P Fini, L Zhao, B Moran, M Hansen, H Marchand, JP Ibbetson, ...
Applied Physics Letters 75 (12), 1706-1708, 1999
1331999
Influence of pressure on the optical properties of epilayers and quantum structures
P Perlin, I Gorczyca, T Suski, P Wisniewski, S Lepkowski, NE Christensen, ...
Physical Review B 64 (11), 115319, 2001
942001
Simulation and optimization of 420-nm InGaN/GaN laser diodes
J Piprek, RK Sink, MA Hansen, JE Bowers, SP DenBaars
Physics and Simulation of Optoelectronic Devices VIII 3944, 28-39, 2000
932000
Quantum information phases in space-time: measurement-induced entanglement and teleportation on a noisy quantum processor
JC Hoke, M Ippoliti, D Abanin, R Acharya, M Ansmann, F Arute, K Arya, ...
arXiv preprint arXiv:2303.04792, 2023
86*2023
Impact of Ga/N flux ratio on trap states in grown by plasma-assisted molecular-beam epitaxy
A Hierro, AR Arehart, B Heying, M Hansen, UK Mishra, SP DenBaars, ...
Applied physics letters 80 (5), 805-807, 2002
842002
Phase transition in random circuit sampling
A Morvan, B Villalonga, X Mi, S Mandra, A Bengtsson, PV Klimov, Z Chen, ...
arXiv preprint arXiv:2304.11119, 2023
822023
Capture kinetics of electron traps in MBE‐Grown n‐GaN
A Hierro, AR Arehart, B Heying, M Hansen, JS Speck, UK Mishra, ...
physica status solidi (b) 228 (1), 309-313, 2001
782001
Higher efficiency InGaN laser diodes with an improved quantum well capping configuration
M Hansen, J Piprek, PM Pattison, JS Speck, S Nakamura, SP DenBaars
Applied physics letters 81 (22), 4275-4277, 2002
732002
Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire
M Hansen, P Fini, L Zhao, AC Abare, LA Coldren, JS Speck, ...
Applied Physics Letters 76 (5), 529-531, 2000
732000
Mg-rich precipitates in the p-type doping of InGaN-based laser diodes
M Hansen, LF Chen, SH Lim, SP DenBaars, JS Speck
Applied physics letters 80 (14), 2469-2471, 2002
582002
Purification-based quantum error mitigation of pair-correlated electron simulations
TE O’Brien, G Anselmetti, F Gkritsis, VE Elfving, S Polla, WJ Huggins, ...
Nature Physics 19 (12), 1787-1792, 2023
572023
Composite high reflectivity layer
T Li, M Hansen, J Ibbetson
US Patent 7,915,629, 2011
492011
Structural and optical characteristics of multiple quantum wells with different In compositions
YH Kwon, GH Gainer, S Bidnyk, YH Cho, JJ Song, M Hansen, ...
Applied physics letters 75 (17), 2545-2547, 1999
481999
Channeling as a mechanism for dry etch damage in GaN
ED Haberer, CH Chen, A Abare, M Hansen, S Denbaars, L Coldren, ...
Applied Physics Letters 76 (26), 3941-3943, 2000
442000
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