| Ultrahigh-quality silicon carbide single crystals D Nakamura, I Gunjishima, S Yamaguchi, T Ito, A Okamoto, H Kondo, ... Nature 430 (7003), 1009-1012, 2004 | 522 | 2004 |
| Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation K Danno, D Nakamura, T Kimoto Applied physics letters 90 (20), 2007 | 247 | 2007 |
| Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density D Nakamura, S Yamaguchi, I Gunjishima, Y Hirose, T Kimoto Journal of crystal growth 304 (1), 57-63, 2007 | 66 | 2007 |
| SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC … D Nakamura, T Ito, H Kondo, M Naito US Patent 6,890,600, 2005 | 52 | 2005 |
| Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal H Kondo, E Oguri, F Hirose, D Nakamura, A Okamoto, N Sugiyama US Patent 6,786,969, 2004 | 46 | 2004 |
| Liquid-phase exfoliation of germanane based on Hansen solubility parameters D Nakamura, H Nakano Chemistry of Materials 30 (15), 5333-5338, 2018 | 43 | 2018 |
| Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth D Nakamura, A Suzumura, K Shigetoh Applied Physics Letters 106 (8), 2015 | 32 | 2015 |
| Tantalum carbide coating via wet powder process: From slurry design to practical process tests D Nakamura, K Shigetoh, A Suzumura Journal of the European Ceramic Society 37 (4), 1175-1185, 2017 | 31 | 2017 |
| Method for manufacturing silicon carbide single crystal from dislocation control seed crystal I Gunjishima, D Nakamura, N Sugiyama, F Hirose US Patent 7,135,074, 2006 | 29 | 2006 |
| Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals D Nakamura, T Kimura, K Horibuchi Applied Physics Express 10 (4), 045504, 2017 | 22 | 2017 |
| Simple and quick enhancement of SiC bulk crystal growth using a newly developed crucible material D Nakamura Applied Physics Express 9 (5), 055507, 2016 | 22 | 2016 |
| Nontoxic organic solvents identified using an a priori approach with Hansen solubility parameters D Nakamura, M Hirano, R Ohta Chemical communications 53 (29), 4096-4099, 2017 | 20 | 2017 |
| Reduction of dislocations in the bulk growth of SiC crystals D Nakamura Materials science forum 527, 3-8, 2006 | 20 | 2006 |
| Impact of SiC structural defects on the degradation phenomenon of bipolar SiC devices RK Malhan, H Nakamura, S Onda, D Nakamura, K Hara Materials Science Forum 433, 917-920, 2002 | 18 | 2002 |
| Fabrication of large-sized TaC-coated carbon crucibles for the low-cost sublimation growth of large-diameter bulk SiC crystals D Nakamura, K Shigetoh Japanese Journal of Applied Physics 56 (8), 085504, 2017 | 17 | 2017 |
| Self-recovery of monolayer Pb adsorbates on the Si (111)-1× 1-Pb surface under ion irradiation at room temperature D Nakamura, J Yuhara, K Morita Surface science 425 (2-3), 174-179, 1999 | 17 | 1999 |
| Nanopipe formation as a result of boron impurity segregation in gallium nitride grown by halogen-free vapor phase epitaxy T Kimura, Y Aoki, K Horibuchi, D Nakamura Journal of Applied Physics 120 (24), 2016 | 16 | 2016 |
| The change of atomic structures and compositions of (Pb, Sn)/Si (111) surfaces by thermal annealing D Nakamura, J Yuhara, K Morita Applied surface science 130, 72-77, 1998 | 15 | 1998 |
| TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors D Nakamura, T Kimura, T Narita, A Suzumura, T Kimoto, K Nakashima Journal of Crystal Growth 478, 163-173, 2017 | 14 | 2017 |
| Hansen solubility parameters of stacked silicanes derived from porous silicon H Nakano, D Nakamura ACS omega 4 (7), 11838-11843, 2019 | 12 | 2019 |
Junji YuharaSchool of Engineering, Nagoya University在 nagoya-u.jp 的电子邮件经过验证
Junji YuharaSchool of Engineering, Nagoya University在 nagoya-u.jp 的电子邮件经过验证