关注
Sunil Singh Kushvaha
Sunil Singh Kushvaha
Principal Scientist, 2D Physics and QHR, CSIR-National Physical Laboratory
在 nplindia.org 的电子邮件经过验证
标题
引用次数
引用次数
年份
Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target
SS Kushvaha, MS Kumar, KK Maurya, MK Dalai, ND Sharma
AIP Advances 3 (9), 092109, 2013
652013
Study of preferential localized degradation and breakdown of HfO 2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO 2 dielectrics
K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic Engineering 109, 364-369, 2013
542013
Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy
SS Kushvaha, MS Kumar, AK Shukla, BS Yadav, DK Singh, M Jewariya, ...
RSC Advances 5 (107), 87818-87830, 2015
492015
Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors
C Ramesh, P Tyagi, B Bhattacharyya, S Husale, KK Maurya, MS Kumar, ...
Journal of Alloys and Compounds 770, 572-581, 2019
462019
Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy
K Shubhakar, KL Pey, SS Kushvaha, SJ O’Shea, N Raghavan, M Bosman, ...
Applied Physics Letters 98 (7), 072902, 2011
392011
Self-assembly of antimony nanowires on graphite
XS Wang, SS Kushvaha, Z Yan, W Xiao
Applied Physics Letters 88 (23), 233105, 2006
352006
Signature of weak-antilocalization in sputtered topological insulator Bi2Se3 thin films with varying thickness
S Gautam, V Aggarwal, B Singh, VPS Awana, R Ganesan, SS Kushvaha
Scientific Reports 12 (1), 9770, 2022
332022
Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy
SS Kushvaha, MS Kumar, BS Yadav, PK Tyagi, S Ojha, KK Maurya, ...
CrystEngComm 18, 744-753, 2016
322016
Light assisted irreversible resistive switching in ultra thin hafnium oxide
H Borkar, A Thakre, SS Kushvaha, RP Aloysius, A Kumar
RSC Advances 5 (44), 35046-35051, 2015
302015
Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy
SS Kushvaha, P Pal, AK Shukla, AG Joshi, G Gupta, M Kumar, S Singh, ...
AIP Advances 4 (2), 027114, 2014
302014
Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting
P Tyagi, C Ramesh, J Kaswan, S Dhua, S John, AK Shukla, SC Roy, ...
Journal of Alloys and Compounds 805, 97-103, 2019
252019
Synthesis and magnetic properties of MnSb nanoparticles on Si-based substrates
H Zhang, SS Kushvaha, S Chen, X Gao, D Qi, ATS Wee, XS Wang
Applied Physics Letters 90 (20), 202503, 2007
252007
Structural, electronic and thermoelectric properties of Bi2Se3 thin films deposited by RF magnetron sputtering
S Gautam, AK Verma, A Balapure, B Singh, R Ganesan, MS Kumar, ...
Journal of Electronic Materials 51 (5), 2500-2509, 2022
232022
Photoconductivity and photo-detection response of multiferroic bismuth iron oxide
A Anshul, H Borkar, P Singh, P Pal, SS Kushvaha, A Kumar
Applied Physics Letters 104 (13), 132910, 2014
222014
Structural and electronic properties of epitaxial GaN layer grown on sapphire (0001) using laser molecular beam epitaxy
SS Kushvaha, MS Kumar, M Maheshwari, AK Shukla, P Pal, KK Maurya
Materials Research Express 1 (3), 035903, 2014
212014
Chirality control and switching of vortices formed in hexagonal shaped ferromagnetic elements
SYH Lua, SS Kushvaha, YH Wu, KL Teo, TC Chong
Applied Physics Letters 93 (12), 122504, 2008
202008
Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications
V Aggarwal, C Ramesh, P Tyagi, S Gautam, A Sharma, S Husale, ...
Materials Science in Semiconductor Processing 125, 105631, 2021
182021
Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE
C Ramesh, P Tyagi, BS Yadav, S Ojha, KK Maurya, MS Kumar, ...
Materials Science and Engineering: B 231, 105-114, 2018
182018
Role of Growth Temperature on Formation of Single crystalline GaN Nanorods on Flexible Titanium foil by Laser Molecular Beam Epitaxy
C Ramesh, P Tyagi, G Abhiram, G Gupta, MS Kumar, SS Kushvaha
Journal of Crystal Growth 509, 23-28, 2019
172019
Charge transfer induced symmetry breaking in GaN/Bi2Se3 topological heterostructure device
F Ahmad, R Kumar, SS Kushvaha, M Kumar, P Kumar
npj 2D Materials and Applications 6, 12 (1-9), 2022
162022
系统目前无法执行此操作,请稍后再试。
文章 1–20