| Modeling inductive switching characteristics of high-speed buffer layer IGBT P Xue, G Fu, D Zhang IEEE Transactions on Power Electronics 32 (4), 3075-3087, 2016 | 41 | 2016 |
| Investigation on the short-circuit oscillation of cascode GaN HEMTs P Xue, L Maresca, M Riccio, G Breglio, A Irace IEEE Transactions on Power Electronics 35 (6), 6292-6300, 2019 | 30 | 2019 |
| Experimental study on the short-circuit instability of cascode GaN HEMTs P Xue, L Maresca, M Riccio, G Breglio, A Irace IEEE Transactions on Electron Devices 67 (4), 1686-1692, 2020 | 24 | 2020 |
| A comprehensive investigation on short-circuit oscillation of p-GaN HEMTs P Xue, L Maresca, M Riccio, G Breglio, A Irace IEEE Transactions on Electron Devices 67 (11), 4849-4857, 2020 | 18 | 2020 |
| Analysis on the self-sustained oscillation of SiC MOSFET body diode P Xue, L Maresca, M Riccio, G Breglio, A Irace IEEE Transactions on Electron Devices 66 (10), 4287-4295, 2019 | 18 | 2019 |
| Self-sustained turn-OFF oscillation of cascode GaN HEMTs: Occurrence mechanism, instability analysis, and oscillation suppression P Xue, F Iannuzzo IEEE Transactions on Power Electronics 37 (5), 5491-5500, 2021 | 17 | 2021 |
| Multivariate storage degradation modeling based on copula function L Xiaogang, X Peng Advances in Mechanical Engineering 6, 503407, 2014 | 15 | 2014 |
| Investigation on the self-sustained oscillation of superjunction MOSFET intrinsic diode P Xue, L Maresca, M Riccio, G Breglio, A Irace IEEE Transactions on Electron Devices 66 (1), 605-612, 2018 | 14 | 2018 |
| Failure analysis of solder layer in power transistor M Jiang, G Fu, B Wan, P Xue, Y Qiu, Y Li Soldering & Surface Mount Technology 30 (1), 49-56, 2018 | 12 | 2018 |
| Investigation on intermittent life testing program for IGBT Y Cheng, G Fu, M Jiang, P Xue Journal of Power Electronics 17 (3), 811-820, 2017 | 12 | 2017 |
| Self-sustained turn-off oscillation of SiC MOSFETs: Origin, instability analysis, and prevention P Xue, L Maresca, M Riccio, G Breglio, A Irace Energies 12 (11), 2211, 2019 | 11 | 2019 |
| Application-oriented reliability testing of power electronic components and converters H Wang, F Iannuzzo, AS Bahman, K Zhang, P Xue, Y Zhang, B Yao, ... IEEE Power Electronics Magazine 9 (4), 22-31, 2022 | 7 | 2022 |
| Comprehensive physics-based compact model for fast pin diode using MATLAB and Simulink P Xue, G Fu, D Zhang Solid-State Electronics 121, 1-11, 2016 | 7 | 2016 |
| An excess carrier lifetime extraction method for physics-based IGBT models G Fu, P Xue Journal of Power Electronics 16 (2), 778-785, 2016 | 7 | 2016 |
| Low inductive characterization of fast-switching SiC MOSFETs and active gate driver units DA Philipps, P Xue, TN Ubostad, F Iannuzzo, D Peftitsis IEEE Transactions on Industry Applications 59 (5), 6384-6398, 2023 | 4 | 2023 |
| A Temperature-Dependent dVCE/dt Model for Field-Stop IGBT at Turn-Off Transient P Xue, P Davari IEEE Journal of Emerging and Selected Topics in Power Electronics 11 (3 …, 2023 | 4 | 2023 |
| Analysis of the reverse recovery oscillation of superjunction MOSFET body diode P Xue, G Fu Solid-State Electronics 129, 81-87, 2017 | 4 | 2017 |
| Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient P Xue, G Fu Solid-State Electronics 129, 35-43, 2017 | 3 | 2017 |
| Physics‐based compact model for the EMCON p–i–n diode using MATLAB and Simulink P Xue, G Fu, D Zhang IET Power Electronics 9 (12), 2416-2424, 2016 | 3 | 2016 |
| Physics‐based model of LPT CSTBT including MOS‐side two‐dimensional effects G Fu, P Xue IET Power Electronics 9 (5), 1019-1028, 2016 | 3 | 2016 |
