| Methods of forming a thin film structure, and a gate structure and a capacitor including the thin film structure H Park, SB Kang, B Jin, Y Shin US Patent App. 11/182,893, 2006 | 477 | 2006 |
| Implementation of HfSiON gate dielectric for sub-60nm DRAM dual gate oxide with recess channel array transistor (RCAT) and tungsten gate SG Park, BJ Jin, HL Lee, HB Park, TS Jeon, HJ Cho, SY Kim, SI Jang, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 235 | 2004 |
| Comparison of films grown by atomic layer deposition using and or as the oxidant HB Park, M Cho, J Park, SW Lee, CS Hwang, JP Kim, JH Lee, NI Lee, ... Journal of applied physics 94 (5), 3641-3647, 2003 | 146 | 2003 |
| Chemical interaction between atomic-layer-deposited thin films and the Si substrate M Cho, J Park, HB Park, CS Hwang, J Jeong, KS Hyun Applied physics letters 81 (2), 334-336, 2002 | 143 | 2002 |
| Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf [N (CH3) 2] 4 precursor M Cho, DS Jeong, J Park, HB Park, SW Lee, TJ Park, CS Hwang, ... Applied physics letters 85 (24), 5953-5955, 2004 | 106 | 2004 |
| Thermal annealing effects on the structural and electrical properties of gate dielectric stacks grown by atomic layer deposition on Si substrates M Cho, HB Park, J Park, CS Hwang, JC Lee, SJ Oh, J Jeong, KS Hyun, ... Journal of applied physics 94 (4), 2563-2571, 2003 | 101 | 2003 |
| Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film KS Kim, H Park, BH Kim, S Kim, J Kwon, J Lee, K Kim, J Lim, G Nam, ... US Patent 7,396,719, 2008 | 99 | 2008 |
| Reasons for obtaining an optical dielectric constant from the Poole–Frenkel conduction behavior of atomic-layer-deposited HfO2 films DS Jeong, HB Park, CS Hwang Applied Physics Letters 86 (7), 2005 | 88 | 2005 |
| Semiconductor device and method of fabricating the same H Hong, SJ Hyun, H Park, H Na, HL Lee US Patent 8,786,028, 2014 | 82 | 2014 |
| High-k properties of atomic-layer-deposited films using a nitrogen-containing precursor and oxidant M Cho, HB Park, J Park, SW Lee, CS Hwang, GH Jang, J Jeong Applied physics letters 83 (26), 5503-5505, 2003 | 74 | 2003 |
| Capacitor and method of manufacturing the same H Park US Patent App. 10/131,475, 2002 | 67 | 2002 |
| High dielectric film and related method of manufacture H Park, Y Shin, SB Kang US Patent 7,521,331, 2009 | 65 | 2009 |
| Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes HC Wen, P Majhi, K Choi, CS Park, HN Alshareef, HR Harris, H Luan, ... Microelectronic Engineering 85 (1), 2-8, 2008 | 61 | 2008 |
| Highly manufacturable 45nm LSTP CMOSFETs using novel dual high-k and dual metal gate CMOS integration S Song, Z Zhang, M Hussain, C Huffman, J Barnett, S Bae, H Li, P Majhi, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 13-14, 2006 | 54 | 2006 |
| Novel capacitor technology for high density stand-alone and embedded DRAMs YK Kim, SH Lee, SJ Choi, HB Park, YD Seo, KH Chin, D Kim, JS Lim, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 50 | 2000 |
| Comparison of properties of an Al2O3 thin layers grown with remote O2 plasma, H2O, or O3 as oxidants in an ALD process for HfO2 gate dielectrics M Cho, HB Park, J Park, SW Lee, CS Hwang, J Jeong, HS Kang, YW Kim Journal of the Electrochemical Society 152 (5), F49, 2005 | 46 | 2005 |
| SONOS type non-volatile memory devices having a laminate blocking insulation layer and methods of manufacturing the same H Park, Y Shin US Patent App. 11/505,033, 2007 | 43 | 2007 |
| Ferroelectric random access memory device and fabrication method therefor B Kim, H Park US Patent 6,229,166, 2001 | 43 | 2001 |
| Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate M Cho, J Park, HB Park, CS Hwang, J Jeong, KS Hyun, YW Kim, CB Oh, ... Applied Physics Letters 81 (19), 3630-3632, 2002 | 36 | 2002 |
| Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off HC Wen, K Choi, CS Park, P Majhi, HR Harris, H Niimi, DHB Park, ... 2007 International Symposium on VLSI Technology, Systems and Applications …, 2007 | 34 | 2007 |
