| Inversion of the Internal Electric Field Due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography L Denaix, F Castioni, M Bryan, D Cooper, E Monroy ACS Applied Materials & Interfaces 15 (8), 11208-11215, 2023 | 7 | 2023 |
| Plastic behavior of the α′ phase in Ti-6Al-4V alloys F Castioni, S Cazottes, AD Rollett, S Dancette Materials Letters 283, 128719, 2021 | 7 | 2021 |
| Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets S Cuesta, L Denaix, F Castioni, LS Dang, E Monroy Semiconductor Science and Technology 37 (7), 075013, 2022 | 6 | 2022 |
| Excitation lifetime extracted from electron–photon (EELS-CL) nanosecond-scale temporal coincidences N Varkentina, Y Auad, SY Woo, F Castioni, JD Blazit, M Tencé, HC Chang, ... Applied Physics Letters 123 (22), 2023 | 5 | 2023 |
| Optical net gain measurement on Al0.07Ga0.93N/GaN multi-quantum wells QM Thai, S Cuesta, L Denaix, S Hermelin, O Boisron, E Bellet-Amalric, ... Optics Express 30 (14), 25219-25233, 2022 | 4 | 2022 |
| Ultrathin GaN quantum wells in AlN nanowires for UV-C emission R Vermeersch, G Jacopin, F Castioni, JL Rouvière, A Garcia-Cristobal, ... Nanotechnology 34 (27), 275603, 2023 | 3 | 2023 |
| Cathodoluminescence emission and electron energy loss absorption from a 2D transition metal dichalcogenide in van der Waals heterostructures N Bonnet, J Baaboura, F Castioni, SY Woo, CH Ho, K Watanabe, ... Nanotechnology, 2024 | 2 | 2024 |
| Impact of strain on Si and Sn incorporation in (Si) GeSn alloys by STEM analyses F Castioni, L Henry, L Casiez, N Bernier, V Reboud, J Chrétien, N Pauc, ... Journal of Applied Physics 132 (19), 2022 | 2 | 2022 |
| Impact of electron beam propagation on high-resolution quantitative chemical analysis of 1 nm-thick GaN/AlGaN quantum wells F Castioni, P Quéméré, S Cuesta, V Delaye, P Bayle-Guillemaud, ... arXiv preprint arXiv:2501.05716, 2025 | | 2025 |
| Nanosecond nanothermometry in an electron microscope F Castioni, Y Auad, JD Blazit, X Li, SY Woo, K Watanabe, T Taniguchi, ... Nano Letters, 2024 | | 2024 |
| Nanoscale Combined Optical Measurements of 2D Chalcogenides in van der Waals heterostructures using Cathodoluminescence and Electron Energy Loss Spectroscopy in SEM and STEM N Bonnet, J Baaboura, F Castioni, SY Woo, CH Ho, K Watanabe, ... Microscopy and Microanalysis 30 (Supplement_1), ozae044. 558, 2024 | | 2024 |
| Quantitative Scanning Transmission Electron Microscopy–High‐Angle‐Annular Dark‐Field Study of the Structure of Pseudo‐2D Sb2Te3 Films Grown by (Quasi … V Sever, N Bernier, D Térébénec, C Sabbione, J Paterson, F Castioni, ... physica status solidi (RRL)–Rapid Research Letters, 2300402, 2024 | | 2024 |
| New insights into optical property characterization of 2D semiconductor materials through time-correlated photon/electron spectroscopies F Castioni, Y Auad, N Varkentina, A Freilinger, SY Woo, N Bonnet, ... BIO Web of Conferences 129, 32004, 2024 | | 2024 |
| Electron beam propagation impact on high-resolution quantitative chemical analysis of GaN/AlGaN 1 nm-thick quantum wells F Castioni, S Cuesta, P Quéméré, E Robin, V Delaye, E Monroy, ... BIO Web of Conferences 129, 06013, 2024 | | 2024 |
| Inversion of the internal electric field in GaN/AlN heterostructures studied by off-axis electron holography L Denaix, F Castioni, M Bryan, D Cooper, E Monroy BIO Web of Conferences 129, 24001, 2024 | | 2024 |
| Spectroscopie quantitative à l'échelle atomique appliquée aux dispositifs photoniques F Castioni Université Grenoble Alpes [2020-....], 2023 | | 2023 |
| Combining Atomic-Scale EDX with Inelastic Multislice Simulations for Quantitative Chemical Analysis of AlGaN/GaN 1 nm-thick Quantum Wells F Castioni, S Cuesta, N Bernier, P Quéméré, E Robin, V Delaye, ... Microscopy and Microanalysis 28 (S1), 2564-2566, 2022 | | 2022 |
| Time-Resolved Cathodoluminescence to study the carriers dynamics in InGaN quantum wells C Santini, N Van Nielen, F Castioni, D Lagarde, R Cours, S Weber, ... Lundi 28 Octobre Mercredi 30 Octobre Mardi 29 Octobre, 175, 0 | | |
