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Andreas Gällström
Andreas Gällström
在 eit.lth.se 的电子邮件经过验证
标题
引用次数
引用次数
年份
The silicon vacancy in SiC
E Janzén, A Gali, P Carlsson, A Gällström, B Magnusson, NT Son
Physica B: Condensed Matter 404 (22), 4354-4358, 2009
1322009
Excitation properties of the divacancy in -SiC
B Magnusson, NT Son, A Csóré, A Gällström, T Ohshima, A Gali, ...
Physical Review B 98 (19), 195202, 2018
662018
Identification and tunable optical coherent control of transition-metal spins in silicon carbide
T Bosma, GJJ Lof, CM Gilardoni, OV Zwier, F Hendriks, B Magnusson, ...
npj Quantum Information 4 (1), 48, 2018
642018
Theory of neutral divacancy in SiC: a defect for spintronics
A Gali, A Gällström, NT Son, E Janzén
Materials science forum 645, 395-397, 2010
522010
High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment
CL Hsiao, TW Liu, CT Wu, HC Hsu, GM Hsu, LC Chen, WY Shiao, ...
Applied Physics Letters 92 (11), 2008
362008
Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined<? format?> Theoretical and Electron Spin Resonance Study
V Ivady, A Gällström, NT Son, E Janzén, A Gali
Physical review letters 107 (19), 195501, 2011
332011
Very high crystalline quality of thick 4H‐SiC epilayers grown from methyltrichlorosilane (MTS)
H Pedersen, S Leone, A Henry, V Darakchieva, P Carlsson, A Gällström, ...
physica status solidi (RRL)–Rapid Research Letters 2 (4), 188-190, 2008
332008
Object recognition in forward looking sonar images using transfer learning
LR Fuchs, A Gällström, J Folkesson
2018 IEEE/OES Autonomous Underwater Vehicle Workshop (AUV), 1-6, 2018
302018
Prominent defects in semi-insulating SiC substrates
NT Son, P Carlsson, A Gällström, B Magnusson, E Janzén
Physica B: Condensed Matter 401, 67-72, 2007
302007
Deep levels in iron doped n-and p-type 4H-SiC
FC Beyer, CG Hemmingsson, S Leone, YC Lin, A Gällström, A Henry, ...
Journal of Applied Physics 110 (12), 2011
282011
Deep levels in tungsten doped n-type 3C–SiC
FC Beyer, CG Hemmingsson, A Gällström, S Leone, H Pedersen, A Henry, ...
Applied physics letters 98 (15), 2011
232011
Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
A Gällström, B Magnusson, FC Beyer, A Gali, NT Son, S Leone, IG Ivanov, ...
Physica B: Condensed Matter 407 (10), 1462-1466, 2012
192012
Electron paramagnetic resonance and theoretical studies of Nb in 4H-and 6H-SiC
N Tien Son, X Thang Trinh, A Gällström, S Leone, O Kordina, E Janzén, ...
Journal of Applied Physics 112 (8), 2012
162012
Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC
NT Son, P Carlsson, A Gällström, B Magnusson, E Janzén
Applied Physics Letters 91 (20), 2007
152007
Optical identification of Mo related deep level defect in 4H and 6H SiC
A Gällström, B Magnusson, E Janzén
Materials Science Forum 615, 405-408, 2009
132009
Deep learning based technique for enhanced sonar imaging
L Rixon Fuchs, C Larsson, A Gällström
5th Underwater Acoustics Conference & Exhibition (UACE), Hersonissos, Crete …, 2019
102019
Optical properties and Zeeman spectroscopy of niobium in silicon carbide
A Gällström, B Magnusson, S Leone, O Kordina, NT Son, V Ivády, A Gali, ...
Physical Review B 92 (7), 075207, 2015
82015
Enhanced sonar image resolution using compressive sensing modelling
A Gällström, L Rixon Fuchs, C Larsson
5th Underwater Acoustics Conference & Exhibition (UACE), Hersonissos, Crete …, 2019
62019
Investigation of Mo defects in 4H-SiC by means of density functional theory
A Csóré, A Gällström, E Janzén, Á Gali
Materials Science Forum 858, 261-264, 2016
62016
Optical characterization of deep level defects in SiC
A Gällström
Linköping University Electronic Press, 2015
52015
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