| Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes AE Atamuratov, A Abdikarimov, M Khalilloev, ZA Atamuratova, ... Наносистемы: физика, химия, математика 8 (1), 2017 | 10 | 2017 |
| The lateral capacitance of nanometer mnosfet with a single charge trapped in oxide layeror at SiO2-Si3N4 interfaceat E Atamuratov, UA Aminov, ZA Atamuratova, M Halillaev, A Abdikarimov, ... Наносистемы: физика, химия, математика 6 (6), 837-842, 2015 | 5 | 2015 |
| Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, ... Наносистемы: физика, химия, математика 13 (2), 148-155, 2022 | 4 | 2022 |
| Optimization of vertically stacked nanosheet FET immune to self-heating M Balasubbareddy, K Sivasankaran, AE Atamuratov, MM Khalilloev Micro and Nanostructures 182, 207633, 2023 | 3 | 2023 |
| Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, AG Loureriro 2021 13th Spanish Conference on Electron Devices (CDE), 62-65, 2021 | 3 | 2021 |
| The self-heating effect in junctionless fin field-effect transistors based on silicon-on-insulator structures with different channel shapes AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov Technical Physics Letters 47 (7), 542-545, 2021 | 2 | 2021 |
| The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET M.M.Khalilloeva, B.O.Jabbarova, A.A.Nasirov Technical Physics Letters 45 (1063-7850), pp. 1245–1248., 2019 | 2 | 2019 |
| The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET AAN M. M. Khalilloeva*, B. O. Jabbarova Technical Physics Letters 45 (1063-7850), pp. 1245–1248., 2019 | 2 | 2019 |
| Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET AE Atamuratov, MM Khalilloev, A Yusupov, AJ García-Loureiro, ... Applied Sciences 10 (15), 5327, 2020 | 1 | 2020 |
| Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate AE Atamuratov, M Khalilloev, A Abdikarimov, ZA Atamuratova, M Kittler, ... Наносистемы: физика, химия, математика 8 (1), 2017 | 1 | 2017 |
| Simulation study of short channel effects in junctionless SOI MOSFETS M Khalilloev arXiv preprint arXiv:2402.14900, 2024 | | 2024 |
| Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs AE Atamuratov, BO Jabbarova, ES Xaitbayev, DR Rajapov, MM Khalilloev arXiv preprint arXiv:2402.10858, 2024 | | 2024 |
| Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape AE Atamuratov, MM Khalilloev, A Yusupov, JC Chedjou, K Kyamakya e-Journal of Surface Science and Nanotechnology 19, 9-12, 2021 | | 2021 |
| Влияние формы канала на амплитуду случайных телеграфных шумов в подпороговой области беспереходного FinFET-транзистора М.M.Халиллоев, Б.О.Жаббарова, А.А.Насиров Письма в ЖТФ 45, вып. 24, 2019 | | 2019 |
| Simulation of DIBL effect and sub-threshold swing in low power junctionless MOSFETs with different geometries M Khalilloev, A Atamuratov, A Yusupov Applied Science, Biofuels & Petroleum Engineering 5, 1, 2018 | | 2018 |
| USING COMSOL MULTIPHYSICS TO STUDY THE EFFECT OF MOSFET GATE DIELECTRIC THICKNESS AND EXTERNAL TEMPERATURE ON ITS OUTPUT CHARACTERISTICS D Rajapov, A Khasanov, E Khaitbayev, M Khalilloev Scientific committee, 108, 0 | | |
Atamuratov A.E.docent of physics department, Urgench State Unversity在 urdu.uz 的电子邮件经过验证
