| Determination of the bending rigidity of graphene via electrostatic actuation of buckled membranes N Lindahl, D Midtvedt, J Svensson, OA Nerushev, N Lindvall, A Isacsson, ... Nano letters 12 (7), 3526-3531, 2012 | 247 | 2012 |
| Schottky barriers in carbon nanotube-metal contacts J Svensson, EEB Campbell Journal of applied physics 110 (11), 2011 | 215 | 2011 |
| Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors J Svensson, N Anttu, N Vainorius, BM Borg, LE Wernersson Nano letters 13 (4), 1380-1385, 2013 | 173 | 2013 |
| Covalent amino-functionalisation of single-wall carbon nanotubes A Gromov, S Dittmer, J Svensson, OA Nerushev, SA Perez-García, ... Journal of Materials Chemistry 15 (32), 3334-3339, 2005 | 148 | 2005 |
| Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V E Memisevic, J Svensson, M Hellenbrand, E Lind, LE Wernersson 2016 IEEE International Electron Devices Meeting (IEDM), 19.1. 1-19.1. 4, 2016 | 131 | 2016 |
| Single InAs/GaSb nanowire low-power CMOS inverter AW Dey, J Svensson, BM Borg, M Ek, LE Wernersson Nano letters 12 (11), 5593-5597, 2012 | 104 | 2012 |
| Individual defects in InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors operating below 60 mV/decade E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ... Nano letters 17 (7), 4373-4380, 2017 | 102 | 2017 |
| III–V nanowire complementary metal–oxide semiconductor transistors monolithically integrated on Si J Svensson, AW Dey, D Jacobsson, LE Wernersson Nano letters 15 (12), 7898-7904, 2015 | 92 | 2015 |
| Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors AW Dey, J Svensson, M Ek, E Lind, C Thelander, LE Wernersson Nano letters 13 (12), 5919-5924, 2013 | 84 | 2013 |
| Low leakage-current InAsSb nanowire photodetectors on silicon MD Thompson, A Alhodaib, AP Craig, A Robson, A Aziz, A Krier, ... Nano letters 16 (1), 182-187, 2016 | 79 | 2016 |
| Carbon nanotube bolometers M Tarasov, J Svensson, L Kuzmin, EEB Campbell Applied Physics Letters 90 (16), 2007 | 79 | 2007 |
| Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates KM Persson, M Berg, MB Borg, J Wu, S Johansson, J Svensson, ... IEEE Transactions on Electron Devices 60 (9), 2761-2767, 2013 | 74 | 2013 |
| Scaling of vertical InAs–GaSb nanowire tunneling field-effect transistors on Si E Memišević, J Svensson, M Hellenbrand, E Lind, LE Wernersson IEEE electron device letters 37 (5), 549-552, 2016 | 72 | 2016 |
| InAs/InGaAsSb/GaSb nanowire tunnel field-effect transistors E Memisevic, J Svensson, E Lind, LE Wernersson IEEE Transactions on Electron Devices 64 (11), 4746-4751, 2017 | 66 | 2017 |
| The dependence of the Schottky barrier height on carbon nanotube diameter for Pd–carbon nanotube contacts J Svensson, AA Sourab, Y Tarakanov, DS Lee, SJ Park, SJ Baek, ... Nanotechnology 20 (17), 175204, 2009 | 59 | 2009 |
| Vertical InAs/InGaAs heterostructure metal–oxide–semiconductor field-effect transistors on Si OP Kilpi, J Svensson, J Wu, AR Persson, R Wallenberg, E Lind, ... Nano letters 17 (10), 6006-6010, 2017 | 57 | 2017 |
| Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point SMINof 35 mV/Decade E Memisevic, J Svensson, E Lind, LE Wernersson IEEE Electron Device Letters 39 (7), 1089-1091, 2018 | 48 | 2018 |
| Electric field aligned growth of single-walled carbon nanotubes S Dittmer, J Svensson, EEB Campbell Current Applied Physics 4 (6), 595-598, 2004 | 44 | 2004 |
| Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si M Berg, KM Persson, OP Kilpi, J Svensson, E Lind, LE Wernersson 2015 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2015 | 37 | 2015 |
| Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization AEO Persson, R Athle, P Littow, KM Persson, J Svensson, M Borg, ... Applied Physics Letters 116 (6), 2020 | 34 | 2020 |
