| Comprehensive scaling study on 3D cross-point PCM toward 1Znm node for SCM applications WC Chien, HY Ho, CW Yeh, CH Yang, HY Cheng, W Kim, IT Kuo, ... 2019 Symposium on VLSI Technology, T60-T61, 2019 | 25 | 2019 |
| Si incorporation into AsSeGe chalcogenides for high thermal stability, high endurance and extremely low Vth drift 3D stackable cross-point memory HY Cheng, IT Kuo, WC Chien, CW Yeh, YC Chou, N Gong, L Gignac, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 22 | 2020 |
| A no-verification multi-level-cell (MLC) operation in cross-point OTS-PCM N Gong, W Chien, Y Chou, C Yeh, N Li, H Cheng, C Cheng, I Kuo, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 16 | 2020 |
| Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low IOFF, High Endurance and Low Vth Drift 3D Crosspoint Memory HY Cheng, WC Chien, IT Kuo, CH Yang, YC Chou, RL Bruce, EK Lai, ... 2021 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2021 | 14 | 2021 |
| Memory and operation method therefor HY Ho, CH Hung, YC Chou US Patent 8,094,494, 2012 | 4 | 2012 |
| Endurance evaluation on OTS-PCM device using constant current stress scheme WC Chien, LM Gignac, YC Chou, CH Yang, N Gong, HY Ho, CW Yeh, ... 2022 IEEE International Reliability Physics Symposium (IRPS), P7-1-P7-4, 2022 | 3 | 2022 |
| Leakage current compensation in crossbar array YC Chou, YF Lin, HY Ho US Patent 11,049,557, 2021 | 3 | 2021 |
| Device Study on OTS-PCM for Persistent Memory Application: IBM/Macronix Phase Change Memory Joint Project WC Chien, LM Gignac, YC Chou, CH Yang, N Gong, HY Ho, CW Yeh, ... 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022 | 1 | 2022 |
| Sensing module, memory device, and sensing method applied to identify un-programmed/programmed state of non-volatile memory cell YC Chou, TY Wang, CH Hung US Patent 12,002,536, 2024 | | 2024 |
| Memory circuit with leakage current blocking mechanism and memory device having the memory circuit TY Wang, YC Chou, CH Hung US Patent 11,842,769, 2023 | | 2023 |
| Phase change memory apparatus and read control method to reduce read disturb and sneak current phenomena YF Lin, YC Chou, HY Ho US Patent 10,297,316, 2019 | | 2019 |
| Memory and operation method therefor HY Ho, CH Hung, YC Chou US Patent 8,456,906, 2013 | | 2013 |
| Using FIR Neural Network to Supplement the FDTD Simulation of Planar Circuits YC Chou, CW Kuo | | |
