| Impacts of climate change on surface water quality in relation to drinking water production I Delpla, AV Jung, E Baures, M Clement, O Thomas Environment international 35 (8), 1225-1233, 2009 | 1243 | 2009 |
| Advances, challenges and opportunities in 3D CMOS sequential integration P Batude, M Vinet, B Previtali, C Tabone, C Xu, J Mazurier, O Weber, ... 2011 International Electron Devices Meeting, 7.3. 1-7.3. 4, 2011 | 391 | 2011 |
| Advances in 3D CMOS sequential integration P Batude, M Vinet, A Pouydebasque, C Le Royer, B Previtali, C Tabone, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 372 | 2009 |
| Planar Fully depleted SOI technology: A Powerful architecture for the 20nm node and beyond O Faynot, F Andrieu, O Weber, C Fenouillet-Béranger, P Perreau, ... 2010 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2010 | 313 | 2010 |
| 3D monolithic integration: Technological challenges and electrical results M Vinet, P Batude, C Tabone, B Previtali, C LeRoyer, A Pouydebasque, ... Microelectronic Engineering 88 (4), 331-335, 2011 | 299 | 2011 |
| CELONCEL: Effective design technique for 3-D monolithic integration targeting high performance integrated circuits S Bobba, A Chakraborty, O Thomas, P Batude, T Ernst, O Faynot, DZ Pan, ... 16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011), 336-343, 2011 | 299 | 2011 |
| UV-visible spectrophotometry of water and wastewater O Thomas, C Burgess Elsevier, 2017 | 280 | 2017 |
| Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length P Batude, M Vinet, C Xu, B Previtali, C Tabone, C Le Royer, L Sanchez, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 158-159, 2011 | 256 | 2011 |
| Performance analysis of 3-D monolithic integrated circuits S Bobba, A Chakraborty, O Thomas, P Batude, VF Pavlidis, G De Micheli 2010 IEEE International 3D Systems Integration Conference (3DIC), 1-4, 2010 | 242 | 2010 |
| First-principles study of the structural, electronic, vibrational, and elastic properties of orthorhombic NiSi D Connétable, O Thomas Physical Review B—Condensed Matter and Materials Physics 79 (9), 094101, 2009 | 241 | 2009 |
| Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT P Batude, L Clavelier, MA Jaud, O Thomas, M Vinet US Patent 8,183,630, 2012 | 236 | 2012 |
| Multi- UTBB FDSOI Device Architectures for Low-Power CMOS Circuit JP Noel, O Thomas, MA Jaud, O Weber, T Poiroux, C Fenouillet-Beranger, ... IEEE Transactions on Electron Devices 58 (8), 2473-2482, 2011 | 231 | 2011 |
| SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable O Thomas, P Batude, A Pouydebasque, M Vinet US Patent 8,013,399, 2011 | 215 | 2011 |
| Germanium on Insulator and new 3D architectures opportunities for integration M Vinet, C Le Royer, P Batude, JF Damlencourt, JM Hartmann, L Hutin, ... International Journal of Nanotechnology 7 (4-8), 304-319, 2010 | 202 | 2010 |
| Interplay between anisotropic strain relaxation and uniaxial interface magnetic anisotropy in epitaxial Fe films on (001) GaAs O Thomas, Q Shen, P Schieffer, N Tournerie, B Lépine Physical Review Letters 90 (1), 017205, 2003 | 162 | 2003 |
| Molybdenum disilicide: Crystal growth, thermal expansion and resistivity O Thomas, JP Senateur, R Madar, O Laborde, E Rosencher Solid state communications 55 (7), 629-632, 1985 | 130 | 1985 |
| Electrical and optical properties of silicide single crystals and thin films F Nava, KN Tu, O Thomas, JP Senateur, R Madar, A Borghesi, G Guizzetti, ... Materials science reports 9 (4-5), 141-200, 1993 | 123 | 1993 |
| Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond F Andrieu, O Weber, J Mazurier, O Thomas, JP Noel, ... 2010 Symposium on VLSI Technology, 57-58, 2010 | 116 | 2010 |
| Resistive memories for ultra-low-power embedded computing design E Vianello, O Thomas, G Molas, O Turkyilmaz, N Jovanovic, D Garbin, ... 2014 IEEE International Electron Devices Meeting 6, 1-6.3, 2014 | 108 | 2014 |
| Diffusion of Sb, Ga, Ge, and (As) in TiSi2 P Gas, G Scilla, A Michel, FK LeGoues, O Thomas, FM d’Heurle Journal of Applied Physics 63 (11), 5335-5345, 1988 | 100 | 1988 |
François WeissCNRS, Grenoble INP在 grenoble-inp.fr 的电子邮件经过验证
