| Room temperature continuous wave, monolithic tunable THz sources based on highly efficient mid-infrared quantum cascade lasers Q Lu, D Wu, S Sengupta, S Slivken, M Razeghi Scientific reports 6 (1), 23595, 2016 | 132 | 2016 |
| Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors JO Kim, S Sengupta, AV Barve, YD Sharma, S Adhikary, SJ Lee, SK Noh, ... Applied Physics Letters 102 (1), 2013 | 102 | 2013 |
| Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure S Sengupta, JO Kim, AV Barve, S Adhikary, YD Sharma, N Gautam, ... Applied Physics Letters 100 (19), 2012 | 64 | 2012 |
| Ultra-broadband quantum cascade laser, tunable over 760 cm−1, with balanced gain N Bandyopadhyay, M Chen, S Sengupta, S Slivken, M Razeghi Optics Express 23 (16), 21159-21164, 2015 | 55 | 2015 |
| Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots M Srujan, K Ghosh, S Sengupta, S Chakrabarti Journal of Applied Physics 107 (12), 2010 | 50 | 2010 |
| Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors AV Barve, S Sengupta, JO Kim, YD Sharma, S Adhikary, TJ Rotter, SJ Lee, ... Applied Physics Letters 99 (19), 2011 | 40 | 2011 |
| High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier S Slivken, S Sengupta, M Razeghi Applied Physics Letters 107 (25), 2015 | 24 | 2015 |
| Optimization of the number of stacks in the submonolayer quantum dot heterostructure for infrared photodetectors D Das, H Ghadi, S Sengupta, A Ahmad, A Manohar, S Chakrabarti IEEE Transactions on Nanotechnology 15 (2), 214-219, 2016 | 19 | 2016 |
| Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures S Sengupta, N Halder, S Chakrabarti, M Herrera, M Bonds, ND Browning Superlattices and Microstructures 46 (4), 611-617, 2009 | 19 | 2009 |
| Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure B Tongbram, A Mandal, S Sengupta, S Chakrabarti Journal of Alloys and Compounds 725, 984-997, 2017 | 18 | 2017 |
| Comprehensive study on molecular beam epitaxy-grown InAs sub-monolayer quantum dots with different capping combinations S Sengupta, A Mandal, H Ghadi, S Chakrabarti, KL Mathur Journal of Vacuum Science & Technology B 31 (3), 2013 | 17 | 2013 |
| Impact of an InxGa1–xAs Capping Layer in Impeding Indium Desorption from Vertically Coupled InAs/GaAs Quantum Dot Interfaces B Tongbram, S Sengupta, S Chakrabarti ACS Applied Nano Materials 1 (8), 4317-4331, 2018 | 15 | 2018 |
| Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness S Sengupta, N Halder, S Chakrabarti Materials Research Bulletin 45 (11), 1593-1597, 2010 | 15 | 2010 |
| Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure B Tongbram, A Ahmad, S Sengupta, A Mandal, J Singhal, A Balgarkashi, ... Journal of Luminescence 192, 89-97, 2017 | 12 | 2017 |
| Barrier selection rules for quantum dots-in-a-well infrared photodetector AV Barve, S Sengupta, JO Kim, J Montoya, B Klein, MA Shirazi, M Zamiri, ... IEEE Journal of Quantum Electronics 48 (10), 1243-1251, 2012 | 12 | 2012 |
| Comparison of luminescence properties of bilayer and multilayer InAs/GaAs quantum dots SY Shah, N Halder, S Sengupta, S Chakrabarti Materials Research Bulletin 47 (1), 130-134, 2012 | 12 | 2012 |
| Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealing S Sengupta, SY Shah, K Ghosh, N Halder, S Chakrabarti Applied Physics A 103, 245-250, 2011 | 12 | 2011 |
| Comparison of three design architectures for quantum dot infrared photodetectors: InGaAs-capped dots, dots-in-a-well, and submonolayer quantum dots H Ghadi, S Sengupta, S Shetty, A Manohar, A Balgarkashi, S Chakrabarti, ... IEEE Transactions on Nanotechnology 14 (4), 603-607, 2015 | 9 | 2015 |
| Annealing of In0. 45Ga0. 55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices K Ghosh, S Kundu, N Halder, M Srujan, S Sengupta, S Chakrabarti Solid state communications 151 (19), 1394-1399, 2011 | 9 | 2011 |
| Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage S Sengupta, SY Shah, N Halder, S Chakrabarti Opto-Electronics Review 18 (3), 295-299, 2010 | 8 | 2010 |
Subhananda (Subho) ChakrabartiProfessor, Indian Institute of Technology Bombay在 ee.iitb.ac.in 的电子邮件经过验证
