| CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance U Peralagu, A Alian, V Putcha, A Khaled, R Rodriguez, ... 2019 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2019 | 62 | 2019 |
| InAs N-MOSFETs with record performance of Ion= 600 μA/μm at Ioff= 100 nA/μm (Vd= 0.5 V) SW Chang, X Li, R Oxland, SW Wang, CH Wang, R Contreras-Guerrero, ... 2013 IEEE International Electron Devices Meeting, 16.1. 1-16.1. 4, 2013 | 47 | 2013 |
| Low-frequency noise investigation of GaN/AlGaN metal–oxide–semiconductor high-electron-mobility field-effect transistor with different gate length and orientation K Takakura, V Putcha, E Simoen, AR Alian, U Peralagu, N Waldron, ... IEEE Transactions on Electron Devices 67 (8), 3062-3068, 2020 | 29 | 2020 |
| GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL B Parvais, A Alian, U Peralagu, R Rodriguez, S Yadav, A Khaled, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2020 | 27 | 2020 |
| Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22%(NH4) 2S surface treatments U Peralagu, IM Povey, P Carolan, J Lin, R Contreras-Guerrero, ... Applied Physics Letters 105 (16), 2014 | 25 | 2014 |
| InAs N-MOSFETs with record performance of Ion= 600 µA/µm at Ioff= 100 nA/µm (Vd= 0.5 V) SW Chang, X Li, R Oxland, SW Wang, CH Wang, R Contreras-Guerrero, ... Proceedings of Technical Digest of the IEEE International Electron Devices …, 2013 | 24 | 2013 |
| The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors YC Fu, U Peralagu, DAJ Millar, J Lin, I Povey, X Li, S Monaghan, ... Applied Physics Letters 110 (14), 142905, 2017 | 22 | 2017 |
| Critical current diffraction pattern of SIFS Josephson junctions with a step-like F-layer M Weides, U Peralagu, H Kohlstedt, J Pfeiffer, M Kemmler, C Gürlich, ... Superconductor science and technology 23 (9), 095007, 2010 | 11 | 2010 |
| Surface state spectrum of AlGaN/AlN/GaN extracted from static equilibrium electrostatics H Yu, A Alian, U Peralagu, M Zhao, N Waldron, B Parvais, N Collaert IEEE Transactions on Electron Devices 68 (11), 5559-5564, 2021 | 10 | 2021 |
| From 5G to 6G: Will compound semiconductors make the difference? N Collaert, A Alian, A Banerjee, V Chauhan, RY ElKashlan, B Hsu, ... 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020 | 10 | 2020 |
| Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications V Putcha, E Bury, J Franco, A Walke, SE Zhao, U Peralagu, M Zhao, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2020 | 10 | 2020 |
| CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities S Yadav, P Cardinael, M Zhao, K Vondkar, U Peralagu, A Alian, A Khaled, ... 2021 International Conference on IC Design and Technology (ICICDT), 1-4, 2021 | 9 | 2021 |
| Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures H Yu, B Parvais, M Zhao, R Rodriguez, U Peralagu, A Alian, N Collaert Applied Physics Letters 120 (21), 2022 | 8 | 2022 |
| ESD HBM discharge model in RF GaN-on-Si (MIS) HEMTs WM Wu, SH Chen, A Sibaja-Hernandez, S Yadav, U Peralagu, H Yu, ... 2021 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2021 | 8 | 2021 |
| Analysis of gate-metal resistance in CMOS-compatible RF GaN HEMTs RY ElKashlan, R Rodriguez, S Yadav, A Khaled, U Peralagu, A Alian, ... IEEE Transactions on Electron Devices 67 (11), 4592-4596, 2020 | 8 | 2020 |
| III-V/III-N technologies for next generation high-capacity wireless communication N Collaert, A Alian, A Banerjee, G Boccardi, P Cardinael, V Chauhan, ... 2022 International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2022 | 7 | 2022 |
| Back barrier trapping induced resistance dispersion in GaN HEMT: Mechanism, modeling, and solutions H Yu, B Parvais, U Peralagu, RY ElKashlan, R Rodriguez, A Khaled, ... 2022 International Electron Devices Meeting (IEDM), 30.6. 1-30.6. 4, 2022 | 7 | 2022 |
| Gate dielectric material influence on DC behavior of MO (I) SHEMT devices operating up to 150° C PGD Agopian, GJ Carmo, JA Martino, E Simoen, U Peralagu, B Parvais, ... Solid-State Electronics 185, 108091, 2021 | 7 | 2021 |
| (Plenary) the revival of compound semiconductors and how they will change the world in a 5G/6G era N Collaert, AR Alian, A Banerjee, V Chauhan, RY ElKashlan, B Hsu, ... ECS Transactions 98 (5), 15, 2020 | 7 | 2020 |
| Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures H Yu, V Putcha, U Peralagu, M Zhao, S Yadav, A Alian, B Parvais, ... Journal of Applied Physics 131 (3), 2022 | 6 | 2022 |
pk hurleyTyndall National Institute, University College Cork在 tyndall.ie 的电子邮件经过验证
