| Light emitting semiconductor device S Lee, YG Shreter, YT Rebane, RI Gorbunov US Patent 7,265,374, 2007 | 1439 | 2007 |
| Polymers, phosphors, and voltaics for radioisotope microbatteries KE Bower, YA Barbanel, YG Shreter, GW Bohnert CRC press, 2002 | 195 | 2002 |
| Stacking faults as quantum wells for excitons in wurtzite GaN YT Rebane, YG Shreter, M Albrecht physica status solidi (a) 164 (1), 141-144, 1997 | 154 | 1997 |
| Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN G Salviati, M Albrecht, C Zanotti‐Fregonara, N Armani, M Mayer, ... physica status solidi (a) 171 (1), 325-339, 1999 | 117 | 1999 |
| Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes NI Bochkareva, VV Voronenkov, RI Gorbunov, AS Zubrilov, YS Lelikov, ... Applied Physics Letters 96 (13), 2010 | 107 | 2010 |
| Light emitting diodes with asymmetric resonance tunnelling WN Wang, YG Shreter, YT Rebane US Patent 6,614,060, 2003 | 89 | 2003 |
| Strain and microstructure variation in grains of CVD diamond film NC Burton, JW Steeds, GM Meaden, YG Shreter, JE Butler Diamond and related materials 4 (10), 1222-1234, 1995 | 66 | 1995 |
| Luminescence related to stacking faults in heterepitaxially grown wurtzite GaN M Albrecht, S Christiansen, G Salviati, C Zanotti-Fregonara, YT Rebane, ... MRS Online Proceedings Library (OPL) 468, 293, 1997 | 64 | 1997 |
| Efficiency droop and incomplete carrier localization in InGaN/GaN quantum well light-emitting diodes NI Bochkareva, YT Rebane, YG Shreter Applied Physics Letters 103 (19), 2013 | 52 | 2013 |
| Неоднородность инжекции носителей заряда и деградация голубых светодиодов НИ Бочкарева, АА Ефремов, ЮТ Ребане, РИ Горбунов, АВ Клочков, ... Физика и техника полупроводников 40 (1), 122, 2006 | 44 | 2006 |
| Unipolar light emitting devices based on III-nitride semiconductor superlattices WN Wang, YG Shreter, YT Rebane US Patent 6,455,870, 2002 | 42 | 2002 |
| Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers S Stepanov, WN Wang, BS Yavich, V Bougrov, YT Rebane, YG Shreter Materials Research Society Internet Journal of Nitride Semiconductor …, 2001 | 42 | 2001 |
| Light emitting diode with charge asymmetric resonance tunneling YT Rebane, YG Shreter, BS Yavich, VE Bougrov, SI Stepanov, WN Wang physica status solidi (a) 180 (1), 121-126, 2000 | 39 | 2000 |
| Широкозонные полупроводники ЮГ Шретер, ЮТ Ребане, ВА Зыков, ВГ Сидоров Санкт-Перербург,“Наука, 122, 2001 | 37 | 2001 |
| Nature of V-shaped defects in GaN V Voronenkov, N Bochkareva, R Gorbunov, P Latyshev, Y Lelikov, ... Japanese Journal of Applied Physics 52 (8S), 08JE14, 2013 | 33 | 2013 |
| Laser slicing: A thin film lift-off method for GaN-on-GaN technology V Voronenkov, N Bochkareva, R Gorbunov, A Zubrilov, V Kogotkov, ... Results in Physics 13, 102233, 2019 | 32 | 2019 |
| MD Brem ser, and RF Davis YG Shreter, YT Rebane Mater. Res. Soc 449, 683, 1997 | 31 | 1997 |
| Degradation and transient currents in III-nitride LEDs YT Rebane, NI Bochkareva, VE Bougrov, DV Tarkhin, YG Shreter, ... Light-Emitting Diodes: Research, Manufacturing, and Applications VII 4996 …, 2003 | 27 | 2003 |
| Two modes of HVPE growth of GaN and related macrodefects VV Voronenkov, NI Bochkareva, RI Gorbunov, PE Latyshev, YS Lelikov, ... physica status solidi c 10 (3), 468-471, 2013 | 26 | 2013 |
| Механизм падения эффективности GaN-светодиодов с ростом тока НИ Бочкарева, ВВ Вороненков, РИ Горбунов, АС Зубрилов, ... Физика и техника полупроводников 44 (6), 822-828, 2010 | 25 | 2010 |
