| Modular multilevel SOI-CMOS active gate driver architecture for SiC MOSFETs N Rouger, Y Barazi, M Cousineau, F Richardeau 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 16 | 2020 |
| CMOS Gate Driver with fast short circuit protection for SiC MOSFETs Y Barazi, N Rouger, F Richardeau 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 6 | 2020 |
| Comparison between ig integration and vgs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors Y Barazi, N Rouger, F Richardeau Mathematics and Computers in Simulation 183, 171-186, 2021 | 4 | 2021 |
| Fast short-circuit protection for SiC MOSFETs in extreme short-circuit conditions by integrated functions in CMOS-ASIC technology Y Barazi Institut National Polytechnique de Toulouse-INPT, 2020 | 4 | 2020 |
| ‘ig, vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability Y Barazi, F Boige, N Rouger, JM Blaquiere, F Richardeau 2020 22nd European Conference on Power Electronics and Applications (EPE'20 …, 2020 | 4 | 2020 |
| Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress F Richardeau, Y Barazi Microelectronics Reliability 138, 114706, 2022 | 3 | 2022 |
| VDS and VGS Depolarization Effect on SiC MOSFET Short-Circuit Withstand Capability Considering Partial Safe Failure-Mode Y Barazi, F Richardeau, W Jouha, JM Reynes Energies 14 (23), 7960, 2021 | 3 | 2021 |
| Robustness study of a fast protection method based on the gate-charge dedicated for SiC MOSFETs power device Y Barazi, F Richardeau, N Rouger, JM BlaquiŔre Microelectronics Reliability 126, 114246, 2021 | 2 | 2021 |
| p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver Y Barazi, F Richardeau, S Vinnac, N Rouger 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 1 | 2023 |
| Protection rapide et robuste contre les courts-circuits internes de convertisseurs à base de MOSFETs SiC Y Barazi, F Boige, NC Rouger, JM Blaquière, S Vinnac, F Richardeau SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2021), 6-8 JUILLET 2021, NANTES, FRANCE, 2021 | | 2021 |
Frédéric RICHARDEAUCNRS Senior Scientist, Director of Research - Lab. LAPLACE - CNRS - University of Toulouse - France在 laplace.univ-tlse.fr 的电子邮件经过验证
