| High on− off conductance switching ratio in optically-driven self-assembled conjugated molecular systems K Smaali, S Lenfant, S Karpe, M Oçafrain, P Blanchard, D Deresmes, ... Acs Nano 4 (4), 2411-2421, 2010 | 153 | 2010 |
| Interface dipole: Effects on threshold voltage and mobility for both amorphous and poly-crystalline organic field effect transistors DV C Celle, C Suspène, M Ternisien, S Lenfant, D Guérin, K Smaali, K ... Organic Electronics 15 (3), 729-737, 2014 | 56 | 2014 |
| Conductance statistics from a large array of sub-10 nm molecular junctions K Smaali, N Clément, G Patriarche, D Vuillaume ACS nano 6 (6), 4639-4647, 2012 | 54 | 2012 |
| Estimation of π–π electronic couplings from current measurements J Trasobares, J Rech, T Jonckheere, T Martin, O Alévêque, E Levillain, ... Nano letters 17 (5), 3215-3224, 2017 | 49 | 2017 |
| Large Array of Sub‐10‐nm Single‐Grain Au Nanodots for use in Nanotechnology N Clément, G Patriarche, K Smaali, F Vaurette, K Nishiguchi, D Troadec, ... Small 7 (18), 2607-2613, 2011 | 42 | 2011 |
| Oligothiophene-derivatized azobenzene as immobilized photoswitchable conjugated systems S Karpe, M Oçafrain, K Smaali, S Lenfant, D Vuillaume, P Blanchard, ... Chemical communications 46 (21), 3657-3659, 2010 | 42 | 2010 |
| On the mechanical and electronic properties of thiolated gold nanocrystals K Smaali, S Desbief, G Foti, T Frederiksen, D Sanchez-Portal, A Arnau, ... Nanoscale 7 (5), 1809-1819, 2015 | 30 | 2015 |
| A Crown‐Ether Loop‐Derivatized Oligothiophene Doubly Attached on Gold Surface as Cation‐Binding Switchable Molecular Junction TK Tran, K Smaali, M Hardouin, Q Bricaud, M Oçafrain, P Blanchard, ... Advanced Materials 25 (3), 427-431, 2013 | 24 | 2013 |
| Scanning near-field electron beam induced current microscopy: Application to III-V heterostructures and quantum dots M Troyon, K Smaali Applied physics letters 90 (21), 2007 | 22 | 2007 |
| Imaging the electric properties of InAs∕ InP (001) quantum dots capped with a thin InP layer by conductive atomic force microscopy: Evidence of memory effect K Smaali, M Troyon, A El Hdiy, M Molinari, G Saint-Girons, G Patriarche Applied physics letters 89 (11), 2006 | 22 | 2006 |
| Influence of Molecular Organization on the Electrical Characteristics of π-conjugated Self-assembled Monolayers X Lefèvre, F Moggia, O Segut, YP Lin, Y Ksari, G Delafosse, K Smaali, ... The Journal of Physical Chemistry C 119 (10), 5703-5713, 2015 | 20 | 2015 |
| Initial stage of the overgrowth of InP on InAs∕ InP (001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges G Saint-Girons, G Patriarche, A Michon, G Beaudoin, I Sagnes, K Smaali, ... Applied physics letters 89 (3), 2006 | 17 | 2006 |
| High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+–n silicon junction K Smaali, J Fauré, A El Hdiy, M Troyon Ultramicroscopy 108 (6), 605-612, 2008 | 16 | 2008 |
| Band-gap determination of the native oxide capping quantum dots by use of different kinds of conductive AFM probes: example of InAs/GaAs quantum dots K Smaali, A El Hdiy, M Molinari, M Troyon IEEE transactions on electron devices 57 (6), 1455-1459, 2010 | 14 | 2010 |
| Physical study by surface characterizations of sarin sensor on the basis of chemically functionalized silicon nanoribbon field effect transistor K Smaali, D Guérin, V Passi, L Ordronneau, A Carella, T Melin, E Dubois, ... The Journal of Physical Chemistry C 120 (20), 11180-11191, 2016 | 13 | 2016 |
| Influence of electron irradiation on the electronic transport mechanisms during the conductive AFM imaging of InAs/GaAs quantum dots capped with a thin GaAs layer M Troyon, K Smaali Nanotechnology 19 (25), 255709, 2008 | 10 | 2008 |
| Application of nano-EBIC to the characterization of GaAs and InP homojunctions K Smaali, M Troyon Nanotechnology 19 (15), 155706, 2008 | 3 | 2008 |
| Local electronic transport through InAs/InP (0 0 1) quantum dots capped with a thin InP layer studied by an AFM conductive probe M Troyon, K Smaali, M Molinari, A El Hdiy, G Saint-Girons, G Patriarche Semiconductor science and technology 22 (7), 755, 2007 | 3 | 2007 |
