| Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008 | 768 | 2008 |
| A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009 | 332 | 2009 |
| Reliability issues of gallium nitride high electron mobility transistors G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni International Journal of Microwave and Wireless Technologies 2 (1), 39-50, 2010 | 134 | 2010 |
| Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress A Sozza, C Dua, E Morvan, S Delage, F Rampazzo, A Tazzoli, F Danesin, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 4 …, 2005 | 120 | 2005 |
| A review of failure modes and mechanisms of GaN-based HEMTs E Zanoni, G Meneghesso, G Verzellesi, F Danesin, M Meneghini, ... 2007 IEEE International Electron Devices Meeting, 381-384, 2007 | 61 | 2007 |
| ESD robustness of AlGaN/GaN HEMT devices A Tazzoli, F Danesin, E Zanoni, G Meneghesso 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007 | 42 | 2007 |
| Electrostatic discharge and cycling effects on ohmic and capacitive RF-MEMS switches A Tazzoli, V Peretti, G Meneghesso IEEE Transactions on Device and Materials Reliability 7 (3), 429-437, 2007 | 41 | 2007 |
| Ovenized high frequency oscillators based on aluminum nitride contour-mode MEMS resonators A Tazzoli, M Rinaldi, G Piazza 2011 International Electron Devices Meeting, 20.2. 1-20.2. 4, 2011 | 39 | 2011 |
| An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches J Iannacci, A Faes, A Repchankova, A Tazzoli, G Meneghesso Microelectronics Reliability 51 (9-11), 1869-1873, 2011 | 38 | 2011 |
| Experimental investigation of thermally induced nonlinearities in aluminum nitride contour-mode MEMS resonators A Tazzoli, M Rinaldi, G Piazza IEEE Electron Device Letters 33 (5), 724-726, 2012 | 35 | 2012 |
| Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism J Iannacci, A Repchankova, A Faes, A Tazzoli, G Meneghesso, ... Microelectronics Reliability 50 (9-11), 1599-1603, 2010 | 33 | 2010 |
| Development of a new high holding voltage SCR-based ESD protection structure G Meneghesso, A Tazzoli, FA Marino, M Cordoni, P Colombo 2008 IEEE International Reliability Physics Symposium, 3-8, 2008 | 33 | 2008 |
| Soft and hard failures of InGaN-based LEDs submitted to electrostatic discharge testing M Meneghini, A Tazzoli, R Butendeich, B Hahn, G Meneghesso, E Zanoni IEEE Electron Device Letters 31 (6), 579-581, 2010 | 32 | 2010 |
| Ultra-high-frequency temperature-compensated oscillators based on ovenized AlN contour-mode MEMS resonators A Tazzoli, G Piazza, M Rinaldi 2012 IEEE International Frequency Control Symposium Proceedings, 1-5, 2012 | 31 | 2012 |
| Reliability issues in RF-MEMS switches submitted to cycling and ESD test A Tazzoli, V Peretti, R Gaddi, A Gnudi, E Zanoni, G Meneghesso 2006 IEEE International Reliability Physics Symposium Proceedings, 410-415, 2006 | 31 | 2006 |
| Reliability enhancement by suitable actuation waveforms for capacitive RF MEMS switches in III–V technology A Persano, A Tazzoli, A Cola, P Siciliano, G Meneghesso, F Quaranta Journal of Microelectromechanical Systems 21 (2), 414-419, 2011 | 29 | 2011 |
| Radiation sensitivity of ohmic RF-MEMS switches for spatial applications A Tazzoli, G Cellere, E Autizi, V Peretti, A Paccagnella, G Meneghesso 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems …, 2009 | 28 | 2009 |
| Design and characterization of an active recovering mechanism for high-performance RF MEMS redundancy switches F Solazzi, A Tazzoli, P Farinelli, A Faes, V Mulloni, B Margesin, ... International Journal of Microwave and Wireless Technologies 3 (5), 539-546, 2011 | 26 | 2011 |
| Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches A Tazzoli, M Barbato, F Mattiuzzo, V Ritrovato, G Meneghesso Microelectronics Reliability 50 (9-11), 1604-1608, 2010 | 26 | 2010 |
| K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability A Persano, A Tazzoli, P Farinelli, G Meneghesso, P Siciliano, F Quaranta Microelectronics Reliability 52 (9-10), 2245-2249, 2012 | 25 | 2012 |
