关注
Christoph Jungemann
Christoph Jungemann
Professor, RWTH
在 ithe.rwth-aachen.de 的电子邮件经过验证
标题
引用次数
引用次数
年份
Hierarchical device simulation: the Monte-Carlo perspective
C Jungemann, B Meinerzhagen
Springer Science & Business Media, 2012
2472012
Impact ionization MOS (I-MOS)-part II: experimental results
K Gopalakrishnan, R Woo, C Jungemann, PB Griffin, JD Plummer
IEEE Transactions on Electron Devices 52 (1), 77-84, 2004
1852004
Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers
C Jungemann, A Emunds, WL Engl
Solid-state electronics 36 (11), 1529-1540, 1993
1481993
High-mobility low band-to-band-tunneling strained-germanium double-gate heterostructure FETs: Simulations
T Krishnamohan, D Kim, CD Nguyen, C Jungemann, Y Nishi, ...
IEEE Transactions on Electron Devices 53 (5), 1000-1009, 2006
1252006
Si/SiGe: C and InP/GaAsSb heterojunction bipolar transistors for THz applications
P Chevalier, M Schröter, CR Bolognesi, V d'Alessandro, M Alexandrova, ...
Proceedings of the IEEE 105 (6), 1035-1050, 2017
1142017
Physical and electrical performance limits of high-speed SiGeC HBTs—Part I: Vertical scaling
M Schroter, G Wedel, B Heinemann, C Jungemann, J Krause, P Chevalier, ...
IEEE Transactions on Electron Devices 58 (11), 3687-3696, 2011
1052011
Deterministic solvers for the Boltzmann transport equation
SM Hong, AT Pham, C Jungemann
Springer Science & Business Media, 2011
1032011
Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle
C Jungemann, AT Pham, B Meinerzhagen, C Ringhofer, M Bollhöfer
Journal of applied physics 100 (2), 2006
1012006
A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
A Abramo, L Baudry, R Brunetti, R Castagne, M Charef, F Dessenne, ...
IEEE Transactions on Electron Devices 41 (9), 1646-1654, 1994
901994
Comparison of (001),(110) and (111) uniaxial-and biaxial-strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and …
T Krishnamohan, D Kim, TV Dinh, A Pham, B Meinerzhagen, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
862008
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
SM Hong, C Jungemann
Journal of computational electronics 8, 225-241, 2009
782009
Physics-based modeling of hole inversion-layer mobility in strained-SiGe-on-insulator
AT Pham, C Jungemann, B Meinerzhagen
IEEE transactions on electron devices 54 (9), 2174-2182, 2007
742007
Efficient full-band Monte Carlo simulation of silicon devices
C Jungemann, S Keith, M Bartels, B Meinerzhagen
IEICE transactions on electronics 82 (6), 870-879, 1999
711999
Failure of moments-based transport models in nanoscale devices near equilibrium
C Jungemann, T Grasser, B Neinhuus, B Meinerzhagen
IEEE Transactions on Electron Devices 52 (11), 2404-2408, 2005
702005
High-frequency noise in nanoscale metal oxide semiconductor field effect transistors
R Navid, C Jungemann, TH Lee, RW Dutton
Journal of applied physics 101 (12), 2007
612007
Physics-based hot-carrier degradation modeling
SE Tyaginov, I Starkov, H Enichlmair, JM Park, C Jungemann, T Grasser
ECS Transactions 35 (4), 321, 2011
592011
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory
C Jungemann, B Neinhus, B Meinerzhagen
IEEE Transactions on Electron Devices 49 (7), 1250-1257, 2002
582002
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results
C Jungemann, B Neinhus, S Decker, B Meinerzhagen
IEEE Transactions on Electron Devices 49 (7), 1258-1264, 2002
542002
KMC simulation of the electroforming, set and reset processes in redox-based resistive switching devices
E Abbaspour, S Menzel, A Hardtdegen, S Hoffmann-Eifert, C Jungemann
IEEE transactions on nanotechnology 17 (6), 1181-1188, 2018
472018
Advanced transport models for sub-micrometer devices
T Grasser, C Jungemann, H Kosina, B Meinerzhagen, S Selberherr
Simulation of Semiconductor Processes and Devices 2004, 1-8, 2004
432004
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