| Ultraintense X-Ray Induced Ionization, Dissociation, and Frustrated Absorption<? format?> in Molecular Nitrogen M Hoener, L Fang, O Kornilov, O Gessner, ST Pratt, M Gühr, EP Kanter, ... Physical review letters 104 (25), 253002, 2010 | 247 | 2010 |
| Characterization of vibrational wave packets by core-level high-harmonic transient absorption spectroscopy ER Hosler, SR Leone Physical Review A—Atomic, Molecular, and Optical Physics 88 (2), 023420, 2013 | 68 | 2013 |
| Considerations for a free-electron laser-based extreme-ultraviolet lithography program ER Hosler, OR Wood II, WA Barletta, PJS Mangat, ME Preil Extreme Ultraviolet (EUV) Lithography VI 9422, 80-94, 2015 | 39 | 2015 |
| Static quenching of tryptophan fluorescence in proteins by a dioxomolybdenum (VI) thiolate complex AA Rhodes, BL Swartz, ER Hosler, DL Snyder, KM Benitez, BS Chohan, ... Journal of Photochemistry and Photobiology A: Chemistry 293, 81-87, 2014 | 31 | 2014 |
| Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology D Dixit, S O’Mullane, S Sunkoju, A Gottipati, ER Hosler, V Kamineni, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 14 (3), 031208-031208, 2015 | 23 | 2015 |
| Optical critical dimension metrology for directed self-assembly assisted contact hole shrink D Dixit, A Green, ER Hosler, V Kamineni, ME Preil, N Keller, J Race, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 15 (1), 014004-014004, 2016 | 21 | 2016 |
| Metrology for block copolymer directed self-assembly structures using Mueller matrix-based scatterometry DJ Dixit, V Kamineni, R Farrell, ER Hosler, M Preil, J Race, B Peterson, ... Journal of Micro/Nanolithography, MEMS, and MOEMS 14 (2), 021102-021102, 2015 | 20 | 2015 |
| Exhaustive oxidation of a nickel dithiolate complex: some mechanistic insights en route to sulfate formation ER Hosler, RW Herbst, MJ Maroney, BS Chohan Dalton Transactions 41 (3), 804-816, 2012 | 20 | 2012 |
| Manufacturability considerations for DSA RA Farrell, ER Hosler, GM Schmid, J Xu, ME Preil, V Rastogi, N Mohanty, ... Advances in Patterning Materials and Processes XXXI 9051, 242-253, 2014 | 16 | 2014 |
| EUV telecentricity and shadowing errors impact on process margins D Civay, E Hosler, V Chauhan, TG Neogi, L Smith, D Pritchard Extreme Ultraviolet (EUV) Lithography VI 9422, 299-311, 2015 | 15 | 2015 |
| Exposing the Role of Electron Correlation in Strong-Field Double Ionization: X-ray Transient Absorption of Orbital Alignment in Xe+ and Xe2+ SG Sayres, ER Hosler, SR Leone The Journal of Physical Chemistry A 118 (37), 8614-8624, 2014 | 10 | 2014 |
| Metrology for directed self-assembly block lithography using optical scatterometry D Dixit, V Kamineni, R Farrell, E Hosler, M Preil, J Race, B Peterson, ... Metrology, Inspection, and Process Control for Microlithography XXVIII 9050 …, 2014 | 9 | 2014 |
| Extending extreme-UV lithography technology ER Hosler, OR Wood, ME Preil SPIE Newsroom, 2016 | 8 | 2016 |
| Method, apparatus and system for using free-electron laser compatible EUV beam for semiconductor wafer metrology ER Hosler, PJS Mangat US Patent 9,844,124, 2017 | 7 | 2017 |
| Free-electron laser emission architecture impact on EUV lithography ER Hosler, OR Wood II, WA Barletta Extreme Ultraviolet (EUV) Lithography VIII 10143, 338-349, 2017 | 6 | 2017 |
| EUV and optical lithographic pattern shift at the 5nm node ER Hosler, S Thiruvengadam, JR Cantone, DE Civay, UP Schroeder Extreme Ultraviolet (EUV) Lithography VII 9776, 327-338, 2016 | 6 | 2016 |
| Sequential multiple ionization and fragmentation of SF6 induced by an intense free electron laser pulse T Osipov, L Fang, B Murphy, F Tarantelli, ER Hosler, E Kukk, JD Bozek, ... Journal of Physics B: Atomic, Molecular and Optical Physics 46 (16), 164032, 2013 | 6 | 2013 |
| Free-electron laser emission architecture impact on extreme ultraviolet lithography ER Hosler, OR Wood, WA Barletta Journal of Micro/Nanolithography, MEMS, and MOEMS 16 (4), 041009-041009, 2017 | 5 | 2017 |
| LER improvement for sub-32nm pitch self-aligned quadruple patterning (SAQP) at back end of line (BEOL) N Mohanty, R Farrell, C Periera, K Subhadeep, E Franke, J Smith, A Ko, ... Advanced Etch Technology for Nanopatterning V 9782, 65-79, 2016 | 5 | 2016 |
| Dual frequency mid-gap capacitively coupled plasma (m-CCP) for conventional and DSA patterning at 10nm node and beyond N Mohanty, A Ko, C Cole, V Rastogi, K Kumar, G Schmid, R Farrell, ... Advanced Etch Technology for Nanopatterning III 9054, 164-175, 2014 | 5 | 2014 |
