High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure Y Chen, X Wang, G Wu, Z Wang, H Fang, T Lin, S Sun, H Shen, W Hu, ... Small 14 (9), 1703293, 2018 | 259 | 2018 |
Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect H Huang, J Wang, W Hu, L Liao, P Wang, X Wang, F Gong, Y Chen, G Wu, ... Nanotechnology 27 (44), 445201, 2016 | 238 | 2016 |
Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains G Wu, B Tian, L Liu, W Lv, S Wu, X Wang, Y Chen, J Li, Z Wang, S Wu, ... Nature Electronics 3 (1), 43-50, 2020 | 202 | 2020 |
Ultrasensitive negative capacitance phototransistors L Tu, R Cao, X Wang, Y Chen, S Wu, F Wang, Z Wang, H Shen, T Lin, ... Nature communications 11 (1), 101, 2020 | 147 | 2020 |
MoTe2 p–n Homojunctions Defined by Ferroelectric Polarization G Wu, X Wang, Y Chen, S Wu, B Wu, Y Jiang, H Shen, T Lin, Q Liu, ... Advanced Materials 32 (16), 1907937, 2020 | 145 | 2020 |
Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating X Wang, Y Chen, G Wu, D Li, L Tu, S Sun, H Shen, T Lin, Y Xiao, M Tang, ... npj 2D Materials and Applications 1 (1), 38, 2017 | 111 | 2017 |
Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains S Wu, Y Chen, X Wang, H Jiao, Q Zhao, X Huang, X Tai, Y Zhou, H Chen, ... Nature communications 13 (1), 3198, 2022 | 108 | 2022 |
Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe2 channels X Wang, C Liu, Y Chen, G Wu, X Yan, H Huang, P Wang, B Tian, Z Hong, ... 2D Materials 4 (2), 025036, 2017 | 104 | 2017 |
Ferroelectric-tuned van der Waals heterojunction with band alignment evolution Y Chen, X Wang, L Huang, X Wang, W Jiang, Z Wang, P Wang, B Wu, ... Nature Communications 12 (1), 4030, 2021 | 99 | 2021 |
Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer Y Chen, X Wang, P Wang, H Huang, G Wu, B Tian, Z Hong, Y Wang, ... ACS applied materials & interfaces 8 (47), 32083-32088, 2016 | 80 | 2016 |
Large‐area high quality PtSe2 thin film with versatile polarity W Jiang, X Wang, Y Chen, G Wu, K Ba, N Xuan, Y Sun, P Gong, J Bao, ... InfoMat 1 (2), 260-267, 2019 | 74 | 2019 |
Ultrasensitive Hybrid MoS2–ZnCdSe Quantum Dot Photodetectors with High Gain S Zhang, X Wang, Y Chen, G Wu, Y Tang, L Zhu, H Wang, W Jiang, L Sun, ... ACS applied materials & interfaces 11 (26), 23667-23672, 2019 | 72 | 2019 |
Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer G Wu, X Wang, P Wang, H Huang, Y Chen, S Sun, H Shen, T Lin, J Wang, ... Nanotechnology 27 (36), 364002, 2016 | 70 | 2016 |
HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector H Jiao, X Wang, Y Chen, S Guo, S Wu, C Song, S Huang, X Huang, X Tai, ... Science Advances 8 (19), eabn1811, 2022 | 69 | 2022 |
Multimechanism synergistic photodetectors with ultrabroad spectrum response from 375 nm to 10 µm X Wang, H Shen, Y Chen, G Wu, P Wang, H Xia, T Lin, P Zhou, W Hu, ... Advanced science 6 (15), 1901050, 2019 | 66 | 2019 |
Ferroelectric polymer tuned two dimensional layered MoTe 2 photodetector H Huang, X Wang, P Wang, G Wu, Y Chen, C Meng, L Liao, J Wang, ... RSC advances 6 (90), 87416-87421, 2016 | 55 | 2016 |
Ultrahigh photoresponsivity MoS2 photodetector with tunable photocurrent generation mechanism G Wu, X Wang, Y Chen, Z Wang, H Shen, T Lin, W Hu, J Wang, S Zhang, ... Nanotechnology 29 (48), 485204, 2018 | 51 | 2018 |
High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics H Wang, Y Chen, E Lim, X Wang, S Yuan, X Zhang, H Lu, J Wang, G Wu, ... Journal of Materials Chemistry C 6 (46), 12714-12720, 2018 | 48 | 2018 |
Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe2 Van der Waals Heterojunctions D Zhao, Y Chen, W Jiang, X Wang, J Liu, X Huang, S Han, T Lin, H Shen, ... Advanced Electronic Materials 7 (5), 2001066, 2021 | 35 | 2021 |
Ferroelectric field effect transistors for electronics and optoelectronics H Jiao, X Wang, S Wu, Y Chen, J Chu, J Wang Applied Physics Reviews 10 (1), 2023 | 25 | 2023 |