Design of dual‐band microstrip patch antenna with right‐angle triangular aperture slot for energy transfer application N Hassan, Z Zakaria, WY Sam, INM Hanapiah, AN Mohamad, AF Roslan, ... International Journal of RF and Microwave Computer‐Aided Engineering 29 (1 …, 2019 | 24 | 2019 |
Effect of channel length variation on analog and RF performance of junctionless double gate vertical MOSFET KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan J. Eng. Sci. Technol 14 (4), 2410-2430, 2019 | 14 | 2019 |
Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, I Ahmad Indonesian Journal of Electrical Engineering and Computer Science 18 (2 …, 2020 | 11 | 2020 |
Geometric and process design of ultra-thin junctionless double gate vertical MOSFETs. KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan International Journal of Electrical & Computer Engineering (2088-8708) 9 (4), 2019 | 9 | 2019 |
Analysis of analog and RF behaviors in junctionless double gate vertical MOSFET KE Kaharudin, Z Napiah, F Salehuddin, ASM Zain, AF Roslan Bulletin of Electrical Engineering and Informatics 9 (1), 101-108, 2020 | 8 | 2020 |
30 nm DG-FinFET 3D construction impact towards short channel effects AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, H Hazura, AR Hanim, ... Indonesian Journal of Electrical Engineering and Computer Science 12 (3 …, 2018 | 8 | 2018 |
Performance analysis of ultrathin junctionless double gate vertical MOSFETs KE Kaharudin, Z Napiah, F Salehuddin, ASM Zain, AF Roslan Bulletin of Electrical Engineering and Informatics 8 (4), 1268-1278, 2019 | 6 | 2019 |
Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method AF Roslan, KE Kaharudin, F Salehuddin, ASM Zain, I Ahmad, ZAN Faizah, ... Journal of Physics: Conference Series 1123 (1), 012046, 2018 | 6 | 2018 |
Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method. AHA Maheran, EN Firhat, F Salehuddin, ASM Zain, I Ahmad, ZAN Faizah, ... Journal of Physics: Conference Series 1502 (1), 012047, 2020 | 5 | 2020 |
Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, I Ahmad, H Hazura, ... Indonesian Journal of Electrical Engineering and Computer Science 14 (2 …, 2019 | 5 | 2019 |
Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan, I Ahmad Journal of Physics: Conference Series 1502 (1), 012045, 2020 | 4 | 2020 |
Predictive analytics of CIGS solar cell using a combinational GRA-MLR-GA model KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan Journal of Engineering Science and Technology 15 (4), 2823-2840, 2020 | 3 | 2020 |
Design consideration and impact of gate length variation on junctionless strained double gate MOSFET KE Kaharudin, AF Roslan, F Salehuddin, Z Napiah, ASM Zain International Journal of Recent Technology and Engineering 8 (2S6), 783-791, 2019 | 3 | 2019 |
Work function variations on electrostatic and RF performances of JLSDGM Device KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan, I Ahmad Indonesian Journal of Electrical Engineering and Computer Science 23 (1 …, 2021 | 2 | 2021 |
Optimization of process parameter variations for 16nm DG-FinFET using Response Surface Methodology-Central Composite Design AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, I Ahmad, H Hazura, ... Journal of Physics: Conference Series 1502 (1), 012042, 2020 | 2 | 2020 |
Optimal design of junctionless double gate vertical MOSFET using hybrid Taguchi-GRA with ANN prediction KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan Journal of Mechanical Engineering and Sciences 13 (3), 5455-5479, 2019 | 2 | 2019 |
Optimization of 16 nm DG-FinFET using L25 orthogonal array of Taguchi statistical method AF Roslan, F Salehuddin, ASM Zain, KE Kaharudin, I Ahmad Indonesian Journal of Electrical Engineering and Computer Science 18 (3 …, 2020 | 1 | 2020 |
Impact of optimization on high-k material gate spacer in DG-FinFET device AF Roslan, F Salehuddin, AS Zain, KE Kaharudin Proc Mech Eng Res Day 2019, 150-151, 2019 | 1 | 2019 |
Enhanced electron mobility in strained Si/SiGe 19nm n-channel MOSFET device A Razak, F Salehuddin, AS Zain, F Waffle, K Kaharudin Proceedings of Mechanical Engineering Research Day 2019, 157-158, 2019 | 1 | 2019 |
Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods AF Roslan, F Salehuddin, ASM Zain, N Mansor, KE Kaharudin, I Ahmad, ... Journal of Physics: Conference Series 1123 (1), 012048, 2018 | 1 | 2018 |