| α/β-Hydrolase domain 6 deletion induces adipose browning and prevents obesity and type 2 diabetes S Zhao, Y Mugabo, G Ballentine, C Attane, J Iglesias, P Poursharifi, ... Cell reports 14 (12), 2872-2888, 2016 | 84 | 2016 |
| Design and simulation of steep-slope silicon cold source FETs with effective carrier distribution model W Gan, RJ Prentki, F Liu, J Bu, K Luo, Q Zhang, H Zhu, W Wang, T Ye, ... IEEE Transactions on Electron Devices 67 (6), 2243-2248, 2020 | 28 | 2020 |
| Numerical analysis of the mechanical behavior of ZTAp/Fe composites W Zhang, H Chen, R Prentki Computational Materials Science 137, 153-161, 2017 | 23 | 2017 |
| Negative-capacitance FET with a cold source S Guo, RJ Prentki, K Jin, H Guo IEEE Transactions on Electron Devices 68 (2), 911-918, 2020 | 18 | 2020 |
| Nanowire transistors with bound-charge engineering RJ Prentki, M Harb, L Liu, H Guo Physical Review Letters 125 (24), 247704, 2020 | 11 | 2020 |
| A multiscale simulation framework for steep-slope Si nanowire cold source FET W Gan, K Luo, G Qi, RJ Prentki, F Liu, J Huo, W Huang, J Bu, Q Zhang, ... IEEE Transactions on Electron Devices 68 (11), 5455-5461, 2021 | 10 | 2021 |
| Modeling of ballistic monolayer black phosphorus MOSFETs RJ Prentki, F Liu, H Guo IEEE Transactions on Electron Devices 66 (8), 3668-3674, 2019 | 8 | 2019 |
| Multi-physics evaluation of silicon steep-slope cold source FET W Gan, R Prentki, K Luo, J Huo, W Huang, Q Huo, J Bu, R Cao, Y Lu, ... 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 3 | 2021 |
| Theory and simulation of novel low-power nanotransistors RJ Prentki McGill University (Canada), 2021 | 3 | 2021 |
| Compact modeling of ballistic monolayer black phosphorus metal-oxide-semiconductor field-effect transistors RJ Prentki McGill University (Canada), 2017 | 3 | 2017 |
| Tunneling leakage in ultrashort-channel MOSFETs—From atomistics to continuum modeling RJ Prentki, M Harb, C Zhou, P Philippopoulos, F Beaudoin, ... Solid-State Electronics 197, 108438, 2022 | 2 | 2022 |
| A surface potential model for field-effect transistors with bound-charge engineering RJ Prentki IEEE Transactions on Electron Devices 68 (9), 4625-4629, 2021 | 2 | 2021 |
| A multi-physics TCAD framework for fast and accurate simulation of SteepSlope Si-based cold source FET W Gan, R Prentki, F Liu, J Bu, Q Zhang, H Zhu, H Yin, W Wang, T Ye, ... 2020 International Symposium on VLSI Technology, Systems and Applications …, 2020 | 2 | 2020 |
| Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors H Zhou, X Dong, RJ Prentki, R Cao, J Wang, H Guo, F Liu IEEE Transactions on Electron Devices, 2024 | 1 | 2024 |
| RESCU S Bohloul, V Michaud-Rioux, R Prentki, MJF Garaffa Technology, 2024 | | 2024 |
| Technology computer-aided design simulations of spin qubits in gated double quantum dots P Philippopoulos, R Prentki, F Fehse, M Mostaan, M Korkusinski, ... Bulletin of the American Physical Society, 2024 | | 2024 |
| Robust Sub-Kelvin Simulations of Quantum Dot Charge Sensing RJ Prentki, F Fehse, P Philippopoulos, C Zhou, H Guo, M Korkusinski, ... 2023 International Conference on Simulation of Semiconductor Processes and …, 2023 | | 2023 |
| (Digital Presentation) Nanowire Transistors with Bound‐Charge Engineering H Guo, R Prentki Electrochemical Society Meeting Abstracts 242, 1178-1178, 2022 | | 2022 |
| Bound Charge Engineering: A Novel Approach to Strengthen Screening in Low-Dimensional Systems R Prentki, M Harb, L Liu, H Guo APS March Meeting Abstracts 2021, P59. 006, 2021 | | 2021 |
| Atomistic Simulations of the Cold Source Field-Effect Transistor for Sub-60 mV/decade Switching R Prentki, M Harb, H Guo Bulletin of the American Physical Society 65, 2020 | | 2020 |
Mohammed HarbMcGill University
Mohammed HarbMcGill University