| Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments MS Wong, J Back, D Hwang, C Lee, J Wang, S Gandrothula, T Margalith, ... Applied Physics Express 14 (8), 086502, 2021 | 22 | 2021 |
| Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layers SNSPD Srinivas Gandrothula, Takeshi Kamikawa, Pavel Shapturenka, Ryan ... Applied Physics Letters 119 (14), 2021 | 13 | 2021 |
| Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate T Kamikawa, S Gandrothula, M Araki, H Li, VB Oliva, F Wu, D Cohen, ... Optics express 27 (17), 24717-24723, 2019 | 11 | 2019 |
| Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser S Gandrothula, T Kamikawa, JS Speck, S Nakamura, SP DenBaars Applied Physics Express 14 (3), 031002, 2021 | 9 | 2021 |
| Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments MS Wong, RC White, S Gee, T Tak, S Gandrothula, H Choi, S Nakamura, ... Applied Physics Express 16 (6), 066503, 2023 | 8 | 2023 |
| An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface S Gandrothula, T Kamikawa, M Araki, D Cohen, JS Speck, S Nakamura, ... Applied Physics Express 13 (4), 041003, 2020 | 8 | 2020 |
| Bloch oscillation in a one-dimensional array of small Josephson junctions H Shimada, S Katori, S Gandrothula, T Deguchi, Y Mizugaki Journal of the Physical Society of Japan 85 (7), 074706, 2016 | 8 | 2016 |
| New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non-and semi-polar GaN substrate T Kamikawa, S Gandrothula, H Li, VB Olivia, F Wu, D Cohen, JS Speck, ... Gallium Nitride Materials and Devices XVI 11686, 26-33, 2021 | 5 | 2021 |
| Method of removing a substrate DA Kamikawa, Takeshi and Gandrothula, Srinivas and Li, Hongjian and Cohen US Patent US12046695B2, 2020 | 4* | 2020 |
| Semipolar {20 2¯ 1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing S Gandrothula, H Zhang, P Shapturenka, R Anderson, MS Wong, H Li, ... Crystals 11 (12), 1563, 2021 | 3 | 2021 |
| Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes A Quevedo, F Wu, TY Tsai, JJ Ewing, T Tak, S Gandrothula, S Gee, X Li, ... Applied Physics Letters 125 (4), 2024 | 2 | 2024 |
| Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation MS Wong, S Gee, T Tak, S Gandrothula, S Rebollo, NG Cha, JS Speck, ... Japanese Journal of Applied Physics 63 (4), 040903, 2024 | 2 | 2024 |
| Method of removing a substrate with a cleaving technique T Kamikawa, S Gandrothula, H Li US Patent 11,508,620, 2022 | 2 | 2022 |
| Method for removing a bar of one or more devices using supporting plates T Kamikawa, S Gandrothula, M Araki US Patent App. 17/434,687, 2022 | 2 | 2022 |
| Method for dividing a bar of one or more devices K Takeshi, G Srinivas US Patent App. 17/048,383, 2021 | 2* | 2021 |
| Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment MS Wong, D Melchert, M Haggmark, DJ Myers, S Grandrothula, ... Light-Emitting Devices, Materials, and Applications XXV 11706, 5-12, 2021 | 2 | 2021 |
| III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition MS Wong, ES Trageser, H Zhang, HM Chang, S Gee, T Tak, ... Optics Express 32 (12), 20483-20490, 2024 | 1 | 2024 |
| Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs T Tak, A Quevedo, F Wu, S Gandrothula, JJ Ewing, S Gee, S Nakamura, ... Applied Physics Letters 124 (17), 2024 | 1 | 2024 |
| Demonstration of III-nitride vertical-cavity surface-emitting lasers with a topside dielectric curved mirror NC Palmquist, JA Kearns, S Gee, A Juan, S Gandrothula, M Lam, ... Applied Physics Express 17 (1), 016504, 2023 | 1 | 2023 |
| Method of removing a substrate with a cleaving technique T Kamikawa, S Gandrothula, H Li US Patent App. 17/945,717, 2023 | 1 | 2023 |
Steven DenBaarsProfessor of Materials, University of California Santa Barbara在 engineering.ucsb.edu 的电子邮件经过验证
