| A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode HH Gong, XH Chen, Y Xu, FF Ren, SL Gu, JD Ye Applied Physics Letters 117 (2), 2020 | 186 | 2020 |
| 2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2 Y Wang, H Gong, Y Lv, X Fu, S Dun, T Han, H Liu, X Zhou, S Liang, J Ye, ... IEEE Transactions on Power Electronics 37 (4), 3743-3746, 2021 | 114 | 2021 |
| Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2 C Wang, H Gong, W Lei, Y Cai, Z Hu, S Xu, Z Liu, Q Feng, H Zhou, J Ye, ... IEEE Electron Device Letters 42 (4), 485-488, 2021 | 111 | 2021 |
| β-Ga2O3 hetero-junction barrier Schottky diode with reverse leakage current modulation and BV2/Ron, sp value of 0.93 GW/cm2 Q Yan, H Gong, J Zhang, J Ye, H Zhou, Z Liu, S Xu, C Wang, Z Hu, ... Applied Physics Letters 118 (12), 2021 | 103 | 2021 |
| β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings HH Gong, XX Yu, Y Xu, XH Chen, Y Kuang, YJ Lv, Y Yang, FF Ren, ... Applied Physics Letters 118 (20), 2021 | 98 | 2021 |
| 1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability H Gong, F Zhou, W Xu, X Yu, Y Xu, Y Yang, F Ren, S Gu, Y Zheng, ... IEEE Transactions on Power Electronics 36 (11), 12213-12217, 2021 | 96 | 2021 |
| Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions H Gong, X Chen, Y Xu, Y Chen, F Ren, B Liu, S Gu, R Zhang, J Ye IEEE Transactions on Electron Devices 67 (8), 3341-3347, 2020 | 95 | 2020 |
| 1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness F Zhou, H Gong, W Xu, X Yu, Y Xu, Y Yang, F Ren, S Gu, Y Zheng, ... IEEE Transactions on Power Electronics 37 (2), 1223-1227, 2021 | 84 | 2021 |
| Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination Q Yan, H Gong, H Zhou, J Zhang, J Ye, Z Liu, C Wang, X Zheng, R Zhang, ... Applied Physics Letters 120 (9), 2022 | 62 | 2022 |
| An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics F Zhou, H Gong, M Xiao, Y Ma, Z Wang, X Yu, L Li, L Fu, HH Tan, Y Yang, ... Nature Communications 14 (1), 4459, 2023 | 57 | 2023 |
| Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability F Zhou, HH Gong, ZP Wang, WZ Xu, XX Yu, Y Yang, FF Ren, SL Gu, ... Applied Physics Letters 119 (26), 2021 | 37 | 2021 |
| Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode Z Wang, H Gong, C Meng, X Yu, X Sun, C Zhang, X Ji, F Ren, S Gu, ... IEEE Transactions on Electron Devices 69 (3), 981-987, 2022 | 36 | 2022 |
| 70-μm-Body Ga2O3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency H Gong, F Zhou, X Yu, W Xu, FF Ren, S Gu, H Lu, J Ye, R Zhang IEEE Electron Device Letters 43 (5), 773-776, 2022 | 33 | 2022 |
| In situ heteroepitaxial construction and transport properties of lattice-matched α-Ir2O3/α-Ga2O3 pn heterojunction JG Hao, HH Gong, XH Chen, Y Xu, FF Ren, SL Gu, R Zhang, YD Zheng, ... Applied Physics Letters 118 (26), 2021 | 31 | 2021 |
| A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction XY Sun, XH Chen, JG Hao, ZP Wang, Y Xu, HH Gong, YJ Zhang, XX Yu, ... Applied Physics Letters 119 (14), 2021 | 26 | 2021 |
| M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability X Sun, Z Wang, H Gong, X Chen, Y Zhang, Z Wang, X Yu, F Ren, H Lu, ... IEEE Electron Device Letters 43 (4), 541-544, 2022 | 19 | 2022 |
| Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors H Gong, Z Wang, X Yu, F Ren, Y Yang, Y Lv, Z Feng, S Gu, R Zhang, ... IEEE Journal of the Electron Devices Society 9, 1166-1171, 2021 | 18 | 2021 |
| Demonstration of β-Ga₂O₃ Superjunction-Equivalent MOSFETs Y Wang, H Gong, X Jia, J Ye, Y Liu, H Hu, X Ou, X Ma, R Zhang, Y Hao, ... IEEE Transactions on Electron Devices 69 (4), 2203-2209, 2022 | 17 | 2022 |
| Anion engineering enhanced response speed and tunable spectral responsivity in gallium-oxynitrides-based ultraviolet photodetectors Y Zhang, X Chen, Y Xu, H Gong, Y Yang, FF Ren, B Liu, S Gu, R Zhang, ... ACS Applied Electronic Materials 2 (3), 808-816, 2020 | 17 | 2020 |
| Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes Z Wang, HH Gong, XX Yu, X Ji, FF Ren, Y Yang, S Gu, Y Zheng, R Zhang, ... Science China Materials 66 (3), 1157-1164, 2023 | 16 | 2023 |
