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huajun sun
huajun sun
School of Optical and Electronic Information, Huazhong University of Science and Technology
在 hust.edu.cn 的电子邮件经过验证 - 首页
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引用次数
引用次数
年份
Ultrafast synaptic events in a chalcogenide memristor
Y Li, Y Zhong, L Xu, J Zhang, X Xu, H Sun, X Miao
Scientific reports 3 (1), 1619, 2013
4342013
Activity-dependent synaptic plasticity of a chalcogenide electronic synapse for neuromorphic systems
Y Li, Y Zhong, J Zhang, L Xu, Q Wang, H Sun, H Tong, X Cheng, X Miao
Scientific reports 4 (1), 4906, 2014
3332014
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
Y Zhang, GQ Mao, X Zhao, Y Li, M Zhang, Z Wu, W Wu, H Sun, Y Guo, ...
Nature communications 12 (1), 7232, 2021
1212021
AgInSbTe memristor with gradual resistance tuning
JJ Zhang, HJ Sun, Y Li, Q Wang, XH Xu, XS Miao
Applied Physics Letters 102 (18), 2013
982013
Customized binary and multi-level HfO2−x-based memristors tuned by oxidation conditions
W He, H Sun, Y Zhou, K Lu, K Xue, X Miao
Scientific reports 7 (1), 10070, 2017
762017
16 Boolean logics in three steps with two anti-serially connected memristors
Y Zhou, Y Li, L Xu, S Zhong, H Sun, X Miao
Applied Physics Letters 106 (23), 2015
622015
Realization of functional complete stateful Boolean logic in memristive crossbar
Y Li, YX Zhou, L Xu, K Lu, ZR Wang, N Duan, L Jiang, L Cheng, ...
ACS applied materials & interfaces 8 (50), 34559-34567, 2016
582016
Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5
Y Li, YP Zhong, JJ Zhang, XH Xu, Q Wang, L Xu, HJ Sun, XS Miao
Applied Physics Letters 103 (4), 2013
442013
Performance enhancement of TaOx resistive switching memory using graded oxygen content
B Wang, KH Xue, HJ Sun, ZN Li, W Wu, P Yan, N Liu, BY Tian, XX Liu, ...
Applied Physics Letters 113 (18), 2018
372018
Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices
P Yan, Y Li, YJ Hui, SJ Zhong, YX Zhou, L Xu, N Liu, H Qian, HJ Sun, ...
Applied Physics Letters 107 (8), 2015
362015
Diverse spike-timing-dependent plasticity based on multilevel HfO x memristor for neuromorphic computing
K Lu, Y Li, WF He, J Chen, YX Zhou, N Duan, MM Jin, W Gu, KH Xue, ...
Applied Physics A 124, 1-9, 2018
352018
Coexistence of Digital and Analog Resistive Switching With Low Operation Voltage in Oxygen-Gradient HfOx Memristors
Z Li, B Tian, KH Xue, B Wang, M Xu, H Lu, H Sun, X Miao
IEEE Electron Device Letters 40 (7), 1068-1071, 2019
342019
Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect
LH Li, KH Xue, LQ Zou, JH Yuan, H Sun, X Miao
Applied Physics Letters 119 (15), 2021
252021
Model of dielectric breakdown in hafnia-based ferroelectric capacitors
KH Xue, HL Su, Y Li, HJ Sun, WF He, TC Chang, L Chen, DW Zhang, ...
Journal of Applied Physics 124 (2), 2018
252018
Alleviating Conductance Nonlinearity via Pulse Shape Designs in TaOx Memristive Synapses
SJ Li, BY Dong, B Wang, Y Li, HJ Sun, YH He, N Xu, XS Miao
IEEE Transactions on Electron Devices 66 (1), 810-813, 2018
212018
Boolean and Sequential Logic in a One‐Memristor‐One‐Resistor (1M1R) Structure for In‐Memory Computing
YX Zhou, Y Li, N Duan, ZR Wang, K Lu, MM Jin, L Cheng, SY Hu, ...
Advanced Electronic Materials 4 (9), 1800229, 2018
202018
Non-volatile boolean logic operation circuit and operation method thereof
X Miao, Y Zhou, Y Li, H Sun
US Patent 9,473,137, 2016
192016
Ferroelectricity in HfO2 from a Coordination Number Perspective
JH Yuan, GQ Mao, KH Xue, N Bai, C Wang, Y Cheng, H Lyu, H Sun, ...
Chemistry of Materials 35 (1), 94-103, 2022
182022
Conductance quantization in an AgInSbTe-based memristor at nanosecond scale
L Jiang, L Xu, JW Chen, P Yan, KH Xue, HJ Sun, XS Miao
Applied Physics Letters 109 (15), 2016
172016
Electrode Materials for Ge2Sb2Te5-Based Memristors
Q Wang, HJ Sun, JJ Zhang, XH Xu, XS Miao
Journal of electronic materials 41, 3417-3422, 2012
172012
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