| Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays E Pérez, Ó González Ossorio, S Dueñas, H Castán, H García, C Wenger Electronics 9 (5), 864, 2020 | 35 | 2020 |
| Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes C Santa Cruz González, B Sahelices Fernández, J Jiménez, ... Institute of Electrical and Electronics Engineers, 2021 | | 2021 |
| Caracterización eléctrica de dispositivos de conmutación resistiva para su aplicación en el ámbito de memorias no volátiles y de circuitos neuromórficos Ó González Ossorio | | 2021 |
| Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications H García García, Ó González Ossorio, S Dueñas Carazo, ... IOP Publishing, 2020 | | 2020 |
| Double swing quiescent-current: An experimental detection method of ferroelectricity in very leaky dielectric films S Dueñas Carazo, MH Castán Lanaspa, Ó González Ossorio, ... IOP Publishing, 2020 | | 2020 |
| Current pulses to control the conductance in RRAM devices H García García, S Dueñas Carazo, Ó González Ossorio, ... IEEE Xplore, 2020 | | 2020 |
| Single and complex devices on three topological configurations of HfO2 based RRAM Ó González Ossorio, S Poblador Cester, G Vinuesa Sanz, ... IEEE Xplore, 2020 | | 2020 |
| Effective reduction of the programing pulse width in Al: HfO2-based RRAM arrays Ó González Ossorio, E Pérez, S Dueñas Carazo, MH Castán Lanaspa, ... IEEE Xplore, 2019 | | 2019 |
| Controlling the intermediate conductance states in RRAM devices for synaptic applications H García García, Ó González Ossorio, S Dueñas Carazo, ... Elsevier, 2019 | | 2019 |
| Dynamics of set and reset processes on resistive switching memories S Dueñas Carazo, MH Castán Lanaspa, Ó González Ossorio, ... Elsevier, 2019 | | 2019 |
| The role of defects in the resistive switching behavior of Ta2O5-TiO2-based metal–insulator–metal (MIM) devices for memory applications S Dueñas Carazo, MH Castán Lanaspa, H García García, ... Springer Link, 2018 | | 2018 |
| Resistive switching properties of atomic layer deposited ZrO2-HfO2 thin films Ó González Ossorio, S Dueñas Carazo, MH Castán Lanaspa, A Tamm, ... IEEE Xplore, 2018 | | 2018 |
| Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices S Dueñas Carazo, MH Castán Lanaspa, Ó González Ossorio, ... Institute of Electrical and Electronics Engineers, 2018 | | 2018 |
| Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters MH Castán Lanaspa, S Dueñas Carazo, H García García, ... AIP Publishing, 2018 | | 2018 |
| Adquisición y análisis de datos de dispositivos de memoria de conmutación resistiva Ó González Ossorio | | 2017 |
| Desarrollo de una interfaz con orientación al objeto para Hitmap Ó González Ossorio | | 2015 |
| Interfaz orientado al objeto para una biblioteca de programación paralela O Gonzalez-Ossorio, J Fresno, A Gonzalez-Escribano | | |
