| Inversion of wurtzite GaN (0001) by exposure to magnesium V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ... Applied Physics Letters 75 (6), 808-810, 1999 | 274 | 1999 |
| Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with M He, I Minus, P Zhou, SN Mohammed, JB Halpern, R Jacobs, WL Sarney, ... Applied Physics Letters 77 (23), 3731-3733, 2000 | 272 | 2000 |
| Growth of GaN nanowires by direct reaction of Ga with NH3 M He, P Zhou, SN Mohammad, GL Harris, JB Halpern, R Jacobs, ... Journal of Crystal Growth 231 (3), 357-365, 2001 | 149 | 2001 |
| Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1− xN alloys CJ Collins, AV Sampath, GA Garrett, WL Sarney, H Shen, M Wraback, ... Applied Physics Letters 86 (3), 2005 | 118 | 2005 |
| Band gap of InAsSb with native lattice constant SP Svensson, WL Sarney, H Hier, Y Lin, D Wang, D Donetsky, ... Physical Review B—Condensed Matter and Materials Physics 86 (24), 245205, 2012 | 106 | 2012 |
| Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials I Vurgaftman, G Belenky, Y Lin, D Donetsky, L Shterengas, G Kipshidze, ... Applied Physics Letters 108 (22), 2016 | 92 | 2016 |
| Properties of unrelaxed InAs1− XSbX alloys grown on compositionally graded buffers G Belenky, D Donetsky, G Kipshidze, D Wang, L Shterengas, WL Sarney, ... Applied physics letters 99 (14), 2011 | 85 | 2011 |
| Surface reconstruction during molecular beam epitaxial growth of GaN (0001) AR Smith, V Ramachandran, RM Feenstra, DW Greve, A Ptak, T Myers, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1998 | 76 | 1998 |
| Role of Ga flux in dislocation reduction in GaN films grown on SiC (0001) CD Lee, A Sagar, RM Feenstra, CK Inoki, TS Kuan, WL Sarney, ... Applied Physics Letters 79 (21), 3428-3430, 2001 | 72 | 2001 |
| Molecular beam epitaxy control and photoluminescence properties of InAsBi SP Svensson, H Hier, WL Sarney, D Donetsky, D Wang, G Belenky Journal of Vacuum Science & Technology B 30 (2), 2012 | 61 | 2012 |
| The effects of multiphase formation on strain relaxation and magnetization in multiferroic BiFeO3 thin films SH Lim, M Murakami, WL Sarney, SQ Ren, A Varatharajan, V Nagarajan, ... Advanced Functional Materials 17 (14), 2594-2599, 2007 | 58 | 2007 |
| Properties of GaN epitaxial layers grown on 6H-SiC (0001) by plasma-assisted molecular beam epitaxy CD Lee, V Ramachandran, A Sagar, RM Feenstra, DW Greve, WL Sarney, ... Journal of electronic materials 30, 162-169, 2001 | 52 | 2001 |
| Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region D Wang, D Donetsky, G Kipshidze, Y Lin, L Shterengas, G Belenky, ... Applied Physics Letters 103 (5), 2013 | 51 | 2013 |
| Pulsed laser deposition and processing of wide band gap semiconductors and related materials RD Vispute, S Choopun, R Enck, A Patel, V Talyansky, RP Sharma, ... Journal of electronic materials 28, 275-286, 1999 | 50 | 1999 |
| Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates G Brill, Y Chen, PM Amirtharaj, W Sarney, D Chandler-Horowitz, NK Dhar Journal of electronic materials 34, 655-661, 2005 | 44 | 2005 |
| Enhanced dielectric properties from barium strontium titanate films with strontium titanate buffer layers MW Cole, E Ngo, C Hubbard, SG Hirsch, M Ivill, WL Sarney, J Zhang, ... Journal of Applied Physics 114 (16), 2013 | 43 | 2013 |
| Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications G Belenky, D Wang, Y Lin, D Donetsky, G Kipshidze, L Shterengas, ... Applied Physics Letters 102 (11), 2013 | 42 | 2013 |
| Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs [sub] 1-X [/sub] Sb [sub] X [/sub] alloys G Belenky, G Kipshidze, D Donetsky, SP Svensson, WL Sarney, H Hier, ... Infrared Technology and Applications XXXVII 8012, 318-327, 2011 | 41 | 2011 |
| Development of bulk InAsSb alloys and barrier heterostructures for long wavelength infrared detectors Y Lin, D Donetsky, D Wang, D Westerfield, G Kipshidze, L Shterengas, ... Journal of Electronic Materials, 2015 | 40 | 2015 |
| Superconducting proximity effect in InAsSb surface quantum wells with in situ Al contacts W Mayer, WF Schiela, J Yuan, M Hatefipour, WL Sarney, SP Svensson, ... ACS Applied Electronic Materials 2 (8), 2351-2356, 2020 | 37 | 2020 |
Stefan P SvenssonArmy Research Laboratory在 mail.mil 的电子邮件经过验证
