| The nature of nitrogen related point defects in common forms of InN KSA Butcher, AJ Fernandes, PPT Chen, M Wintrebert-Fouquet, ... Journal of applied physics 101 (12), 2007 | 76 | 2007 |
| Stoichiometry effects and the Moss–Burstein effect for InN KSA Butcher, H Hirshy, RM Perks, M Wintrebert‐Fouquet, PPT Chen physica status solidi (a) 203 (1), 66-74, 2006 | 45 | 2006 |
| Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates H Chandrasekar, MJ Uren, A Eblabla, H Hirshy, MA Casbon, PJ Tasker, ... IEEE Electron Device Letters 39 (10), 1556-1559, 2018 | 36 | 2018 |
| Self-aligned flexible organic thin-film transistors with gates patterned by nano-imprint lithography H Gold, A Haase, A Fian, C Prietl, B Striedinger, F Zanella, N Marjanović, ... Organic Electronics 22, 140-146, 2015 | 36 | 2015 |
| Process factors influence on cavity pressure behavior in microinjection moulding CA Griffiths, SS Dimov, S Scholz, H Hirshy, G Tosello | 34 | 2011 |
| Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology H Chandrasekar, MJ Uren, MA Casbon, H Hirshy, A Eblabla, K Elgaid, ... IEEE Transactions on Electron Devices 66 (4), 1681-1687, 2019 | 29 | 2019 |
| A novel texturing of micro injection moulding tools by applying an amorphous hydrogenated carbon coating CA Griffiths, SS Dimov, A Rees, O Dellea, J Gavillet, F Lacan, H Hirshy Surface and Coatings Technology 235, 1-9, 2013 | 25 | 2013 |
| Design and validation of a novel master-making process chain for organic and large area electronics on flexible substrates V Velkova, G Lalev, H Hirshy, S Scholz, J Hiitola-Keinänen, H Gold, ... Microelectronic Engineering 87 (11), 2139-2145, 2010 | 24 | 2010 |
| Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs A Pooth, J Bergsten, N Rorsman, H Hirshy, R Perks, P Tasker, T Martin, ... Microelectronics Reliability 68, 2-4, 2017 | 18 | 2017 |
| Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors F Zanella, N Marjanović, R Ferrini, H Gold, A Haase, A Fian, B Stadlober, ... Organic Electronics 14 (11), 2756-2761, 2013 | 18 | 2013 |
| Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs H Hirshy, M Singh, MA Casbon, RM Perks, MJ Uren, T Martin, M Kuball, ... IEEE Transactions on Electron Devices 65 (12), 5307-5313, 2018 | 16 | 2018 |
| Analysis of gain variation with changing supply voltages in GaN HEMTs for envelope tracking power amplifiers A Alt, H Hirshy, S Jiang, KB Lee, MA Casbon, P Chen, PA Houston, ... IEEE Transactions on Microwave Theory and Techniques 67 (7), 2495-2504, 2019 | 15 | 2019 |
| Process chain for serial manufacture of 3D micro-and nano-scale structures V Velkova, G Lalev, H Hirshy, F Omar, S Scholz, E Minev, S Dimov CIRP Journal of Manufacturing Science and Technology 4 (4), 340-346, 2011 | 15 | 2011 |
| Prototype tooling for producing small series of polymer microparts CA Griffiths, SS Dimov, H Hirshy, S Scholz, S Fischer, M Spitzbart Proceedings of the Institution of Mechanical Engineers, Part B: Journal of …, 2011 | 13 | 2011 |
| FIB sputtering optimization using Ion Reverse Software A Svintsov, S Zaitsev, G Lalev, S Dimov, V Velkova, H Hirshy Microelectronic engineering 86 (4-6), 544-547, 2009 | 13 | 2009 |
| Fabrication and validation of fused silica NIL templates incorporating different length scale features G Lalev, P Petkov, N Sykes, H Hirshy, V Velkova, S Dimov, D Barrow Microelectronic engineering 86 (4-6), 705-708, 2009 | 9 | 2009 |
| Formation of ordered arrays of Si and GaAs nanostructures by single-shot laser irradiation in near-field at the solid/liquid interface M Ulmeanu, P Petkov, H Hirshy, E Brousseau Materials Research Express 1 (1), 015030, 2014 | 6 | 2014 |
| UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping M Wohlfahrt, MJ Uren, F Kaess, O Laboutin, H Hirshy, M Kuball Applied Physics Letters 118 (16), 2021 | 4 | 2021 |
| Fabrication of aluminium nanowires by differential pressure injection A Hashoosh, H Hirshy, EB Brousseau, A Moosa International Scholarly Research Notices 2013 (1), 132798, 2013 | 4 | 2013 |
| Study of drain injected breakdown mechanisms in AlGaN/GaN-on-SiC HEMTs F Yang, M Singh, MJ Uren, T Martin, H Hirshy, MA Casbon, PJ Tasker, ... IEEE Transactions on Electron Devices 69 (2), 525-530, 2022 | 3 | 2022 |
