| Origin of structure and zero-phonon-line anomalies of centers in diamond C Qiu, HX Deng, S Geng, SH Wei Physical Review B 107 (21), 214110, 2023 | 7 | 2023 |
| Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic C Qiu, R Cao, F Wang, HX Deng Applied Physics Letters 118 (8), 2021 | 7 | 2021 |
| Nonradiative Carrier Recombination Enhanced by Vacancy Defects in Ionic II-VI Semiconductors D Guo, C Qiu, K Yang, HX Deng Physical Review Applied 15 (6), 064025, 2021 | 6 | 2021 |
| Band offset trends in IV–VI layered semiconductor heterojunctions Y Wang, C Qiu, C Shen, L Li, K Yang, Z Wei, HX Deng, C Xia Journal of Physics: Condensed Matter 34 (19), 195003, 2022 | 5 | 2022 |
| Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO2 C Qiu, Y Song, HX Deng, SH Wei Journal of the American Chemical Society 145 (45), 24952-24957, 2023 | 3 | 2023 |
| Origin of the discrepancy between the fundamental and optical gaps and native defects in two dimensional ultra-wide bandgap semiconductor: Gallium thiophosphate T Shen, C Zhang, C Qiu, HX Deng Applied Physics Letters 120 (17), 2022 | 3 | 2022 |
| Direct calculations on the band offsets of large-lattice-mismatched and heterovalent Si and III–V semiconductors Y Hu, C Qiu, T Shen, K Yang, H Deng Journal of Semiconductors 42 (11), 112102, 2021 | 3 | 2021 |
| First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe2 and WSe2 C Qiu, C Zhang, S Geng, F Wang, HX Deng The Journal of Physical Chemistry C 126 (38), 16539-16545, 2022 | 2 | 2022 |
| Nitrogen-vacancy centers promote super-radiant maser performance C Qiu, HX Deng Science China Materials, 1-1, 2022 | 2 | 2022 |
| First-Principles Study of Intrinsic Point Defects of Monolayer GeS C Qiu, R Cao, CX Zhang, C Zhang, D Guo, T Shen, ZY Liu, YY Hu, ... Chinese Physics Letters 38 (2), 026103, 2021 | 2 | 2021 |
| Origin and designing of large ground-state zero-field splitting of color centers in diamond C Qiu, HP Liang, HX Deng, SH Wei Physical Review B 110 (2), 024104, 2024 | | 2024 |
| Correcting charged supercell defect calculations in low-dimensional semiconductors C Zhang, L Yan, C Qiu, CX Zhang, T Shen, SH Wei, HX Deng Physical Review B 108 (24), 245305, 2023 | | 2023 |
Huixiong DengInstitute of Semiconductors, Chinese Academy of Sciences在 semi.ac.cn 的电子邮件经过验证
