| III-Nitride double-heterojunction solar cells with high in-content InGaN absorbing layers: comparison of large-area and small-area devices CAM Fabien, A Maros, CB Honsberg, WA Doolittle IEEE journal of photovoltaics 6 (2), 460-464, 2015 | 38 | 2015 |
| High temperature characterization of GaAs single junction solar cells A Maros, S Gangam, Y Fang, J Smith, D Vasileska, S Goodnick, ... 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-5, 2015 | 26 | 2015 |
| Growth and characterization of GaAs1− x− ySbxNy/GaAs heterostructures for multijunction solar cell applications A Maros, N Faleev, RR King, CB Honsberg Journal of Vacuum Science & Technology B 34 (2), 2016 | 23 | 2016 |
| Carrier localization effects in GaAs1− xSbx/GaAs heterostructures A Maros, NN Faleev, MI Bertoni, CB Honsberg, RR King Journal of Applied Physics 120 (18), 2016 | 21 | 2016 |
| Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures A Maros, N Faleev, RR King, CB Honsberg, D Convey, H Xie, FA Ponce Journal of Vacuum Science & Technology B 34 (2), 2016 | 20 | 2016 |
| Strain relaxation in low-mismatched GaAs/GaAs1-xSbx/GaAs heterostructures A Gangopadhyay, A Maros, N Faleev, DJ Smith Acta Materialia 162, 103-115, 2019 | 14 | 2019 |
| 1-eV GaNAsSb for multijunction solar cells A Maros, N Faleev, SH Lee, JS Kim, CB Honsberg, RR King 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2306-2309, 2016 | 11 | 2016 |
| Atomic structure of dissociated 60° dislocations in GaAs/GaAs0. 92Sb0. 08/GaAs heterostructures A Gangopadhyay, A Maros, N Faleev, DJ Smith Scripta Materialia 153, 77-80, 2018 | 7 | 2018 |
| Defect Creation in InGaAs/GaAs Multiple Quantum Wells–II. Optical Properties MM Karow, NN Faleev, A Maros, CB Honsberg Journal of Crystal Growth 425, 49-53, 2015 | 6 | 2015 |
| Short wavelength infrared optoelectronic devices having a dilute nitride layer R Roucka, S Siala, A Maros, T Liu, F Suarez, E Pickett US Patent 11,271,122, 2022 | 4 | 2022 |
| Chirped distributed bragg reflectors for photovoltaic cells and other light absorption devices D Ding, P Dowd, F Suarez, DT Bilir, A Maros US Patent App. 16/298,402, 2019 | 4 | 2019 |
| Stacked semiconductor lasers with controlled spectral emission A Maros, B Pantha, R Roucka, S Siala US Patent App. 17/131,292, 2021 | 2 | 2021 |
| Dilute nitride based lasers, photodetectors, and sensing systems S Siala, R Roucka, A Maros US Patent App. 17/070,666, 2021 | 2 | 2021 |
| Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells A Maros Arizona State University, 2017 | 2 | 2017 |
| Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions F Suarez, D Ding, A Maros US Patent 11,211,514, 2021 | 1 | 2021 |
| Dilute nitride optoelectronic absorption devices having graded or stepped interface regions F Suarez, A Maros US Patent App. 17/202,186, 2021 | 1 | 2021 |
| Optoelectronic devices having a dilute nitride layer R Roucka, S Siala, A Maros US Patent App. 17/251,110, 2021 | 1 | 2021 |
| Broadband Dilute Nitride Light Emitters for Imaging and Sensing Applications A Maros, P Dowd, R Roucka, S Siala US Patent App. 17/156,048, 2021 | 1 | 2021 |
| Broadband uv-to-swir photodetectors, sensors and systems A Maros, F Suarez, J Liebowitz US Patent App. 17/144,604, 2021 | 1 | 2021 |
| Hydrogen diffusion barrier for hybrid semiconductor growth A Maros, F Suarez, J Thorp, M Sheldon, T Liu US Patent 10,991,835, 2021 | 1 | 2021 |
