| Backstepping control with integral action of PMSM integrated according to the MRAS observer A Larbaoui, B Belabbes, A Meroufel, A Tahour, D Bouguenna IOSR Journal of Electrical and Electronics Engineering 9 (4), 59-69, 2014 | 15 | 2014 |
| Computational investigation of CrFeZ [Z= Si, Sn and Ge] half-Heusler compounds ferromagnets A Beloufa, B Bakhti, D Bouguenna, MR Chellali Physica B: Condensed Matter 563, 50-55, 2019 | 12 | 2019 |
| Comparative study on performance of cubic AlxGa1− xN/GaN nanostructures MODFETs and MOS-MODFETs D Bouguenna, AB Stambouli, NM Maaza, A Zado, DJ As Superlattices and Microstructures 62, 260-268, 2013 | 11 | 2013 |
| Performance evaluation of electrical properties of GaN MOS-HEMTs based biosensors for rapid detection of viruses F Mouffoki, D Bouguenna, FZ Dahou, A Beloufa, SA Loan Materials Today Communications 33, 104726, 2022 | 9 | 2022 |
| Commande par mode glissant floue de la machine synchrone A Larbaoui, B Belabbes, A Meroufel, D Bouguenna Rev. Roum. Sci. Techn.–Électrotechn. et Énerg 62 (2), 192-196, 2017 | 7 | 2017 |
| 2D Simulations of Current-voltage Characteristics of Cubic AlxGa1-xN/GaN Modulation Doped Hetero-junction Field Effect Transistor Structures D Bouguenna, AB Stambouli, A Zado, DJ As, NM Maaza Sci. Acad. Pub. Electr. Electron. Eng. 2 (5), 309-315, 2012 | 5 | 2012 |
| Performance Analysis of AlGaN MOSHEMT Based Biosensors for Detection of Proteins A Bouguenna, D Bouguenna, AB Stambouli, SA Loan, AM Bhat Transactions on Electrical and Electronic Materials 24 (3), 188-193, 2023 | 3 | 2023 |
| A Physics-Based Compact Static and Dynamic Characteristics Model for Al2O3/InxAl1−xN/AlN/GaN MOS-HEMTs A Beloufa, D Bouguenna, N Kermas, DJ As Journal of Electronic Materials 49 (3), 2008-2017, 2020 | 3 | 2020 |
| Compact mole fraction-dependent modeling of I-V and C-V characteristics in AlGaN/GaN HEMTs N Kermas, B Djellouli, D Bouguenna, W Eshetu, O Moldovan, B Iñiguez Journal of Computational Electronics 17, 224-229, 2018 | 3 | 2018 |
| Examples of shrinkage estimators of the mean, dominating the maximum likelihood estimator in larges dimension A Hamdaoui, N Mezouar, D Benmansour, D Bouguenna IOSR Journal of Mathematics 12 (3), 14-28, 2016 | 3 | 2016 |
| FUZZY SLIDING MODE CONTROL FOR SYNCHRONOUS MACHINE A Larbaoui, B Belabbes, A Meroufel, D Bouguenna REVUE ROUMAINE DES SCIENCES TECHNIQUES-SERIE ELECTROTECHNIQUE ET ENERGETIQUE …, 2017 | 2 | 2017 |
| High performance of cubic AlxGa1-xN/GaN double gate MOS-HEMTs D Bouguenna, N Kermas, B Djellouli Int Res J Eng Technol (IRJET) 2 (9), 2072-2077, 2015 | 2 | 2015 |
| Investigation of the Electrical Characteristics of AlGaN/AlN/GaN Heterostructure MOS-HEMTs with TiO2 High-k Gate Insulator D Bouguenna, A Beloufa, K Hebali, SA Loan Int. J. Nanoelectron. Mater. 16 (3), 607-620, 2023 | 1 | 2023 |
| Numerical analysis of transmission coefficient, LDOS, and DOS in superlattice nanostructures of cubic resonant tunneling MODFETs D Bouguenna, T Wecker, DJ As, N Kermas, A Beloufa Journal of Computational Electronics 15, 1269-1274, 2016 | 1 | 2016 |
| Impact of geometrical parameters on AlGaN/GaN heterostructure MOS-HEMT biosensor A Bouguenna, D Bouguenna, A Boudghene Stambouli, AM Bhat Journal of Computational Electronics 24 (1), 1-9, 2025 | | 2025 |
| Participation Form M Faiza, D Bouguenna | | 2023 |
| Comparative Study and Modeling of AlGaN/GaN Heterostructure HEMT and MOSHEMT Biosensors A Bouguenna, D Bouguenna, AB Stambouli, AM Bhat International Journal of Nanoelectronics & Materials 16 (3), 2023 | | 2023 |
| Performance Analysis of GaN/AlGaN/AlN/GaN MIS-MODFETs with High-κ as Gate Dielectric Insulator Layer K Hebali, D Bouguenna, A Beloufa, SA Loan Transactions on Electrical and Electronic Materials 24 (3), 250-257, 2023 | | 2023 |
| High Spin Polarization and Mechanic Stability of Half-Heusler Compounds: CrFeSn and CrFeGe as a Candidate in the Spin-FETs for Spintronic Applications A Beloufa, D Bouguenna, K Hebali 1st International Conference on Computational & Applied Physics, 180, 2022 | | 2022 |
| Transistors a effet de champ a base de nitrures GAN/AlGan D BOUGUENNA Université d'Oran1-Ahmed Ben Bella, 0 | | |
Sajad A LoanProfessor of Electronics Engineering, Jamia Millia Islamia New Delhi在 jmi.ac.in 的电子邮件经过验证
