| van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016 | 653 | 2016 |
| Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2 CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee ACS nano 9 (1), 363-370, 2015 | 201 | 2015 |
| Gate-tunable resonant tunneling in double bilayer graphene heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ... Nano letters 15 (1), 428-433, 2015 | 194 | 2015 |
| Band Alignment in WSe2–Graphene Heterostructures K Kim, S Larentis, B Fallahazad, K Lee, J Xue, DC Dillen, CM Corbet, ... ACS nano 9 (4), 4527-4532, 2015 | 175 | 2015 |
| CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films ME Ramon, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ... ACS nano 5 (9), 7198-7204, 2011 | 150 | 2011 |
| Scaling of Al2O3 dielectric for graphene field-effect transistors B Fallahazad, K Lee, G Lian, S Kim, CM Corbet, DA Ferrer, L Colombo, ... Applied Physics Letters 100 (9), 2012 | 140 | 2012 |
| Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ... IEEE Electron Device Letters 36 (4), 405-407, 2015 | 66 | 2015 |
| Raman spectroscopy and strain mapping in individual core-shell nanowires DC Dillen, KM Varahramyan, CM Corbet, E Tutuc Physical Review B 86 (4), 045311, 2012 | 37 | 2012 |
| Ultrathin, wafer-scale hexagonal boron nitride on dielectric surfaces by diffusion and segregation mechanism S Sonde, A Dolocan, N Lu, C Corbet, MJ Kim, E Tutuc, SK Banerjee, ... 2D Materials 4 (2), 025052, 2017 | 34 | 2017 |
| Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions HCP Movva, ME Ramón, CM Corbet, S Sonde, F Chowdhury, ... Applied Physics Letters 101 (18), 2012 | 31 | 2012 |
| Improved contact resistance in ReSe2 thin film field-effect transistors CM Corbet, SS Sonde, E Tutuc, SK Banerjee Applied Physics Letters 108 (16), 2016 | 27 | 2016 |
| Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms CM Corbet, C McClellan, K Kim, S Sonde, E Tutuc, SK Banerjee ACS nano 8 (10), 10480-10485, 2014 | 19 | 2014 |
| Origin of shape anisotropy effects in solution-phase synthesized FePt nanomagnets DA Ferrer, S Guchhait, H Liu, F Ferdousi, C Corbet, H Xu, M Doczy, ... Journal of Applied Physics 110 (1), 2011 | 16 | 2011 |
| ReS2-based interlayer tunnel field effect transistor OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ... Journal of Applied Physics 122 (24), 2017 | 13 | 2017 |
| Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee Applied Physics Letters 104 (8), 2014 | 12 | 2014 |
| ACS Nano 9, 363 (2015) CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee, CET Al | 8 | |
| Gate capacitance scaling and graphene field-effect transistors with ultra-thin top-gate dielectrics B Fallahazad, K Lee, S Kim, C Corbet, E Tutuc 69th Device Research Conference, 35-36, 2011 | 6 | 2011 |
| ACS Nano 5, 7198 (2011) ME Ramón, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ... | 5 | |
| Graphene field-effect transistors with self-aligned spin-on-doping of source/drain access regions HCP Movva, ME Ramón, CM Corbet, FS Chowdhury, G Carpenter, ... 70th Device Research Conference, 175-176, 2012 | 3 | 2012 |
| Gate tunable resonant tunneling in graphene-based heterostructures and device applications E Tutuc, B Fallahazad, S Kang, K Lee, K Kim, HCP Movva, X Mou, ... 2015 73rd Annual Device Research Conference (DRC), 269-270, 2015 | 1 | 2015 |
