| Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs) Y Sun, X Kang, Y Zheng, J Lu, X Tian, K Wei, H Wu, W Wang, X Liu, ... Electronics 8 (5), 575, 2019 | 101 | 2019 |
| Optimization of mesa etch for a quasi-vertical GaN Schottky barrier diode (SBD) by inductively coupled plasma (ICP) and device characteristics Y Sun, X Kang, Y Zheng, K Wei, P Li, W Wang, X Liu, G Zhang Nanomaterials 10 (4), 657, 2020 | 35 | 2020 |
| Low leakage and high forward current density quasi-vertical GaN Schottky barrier diode with post-mesa nitridation X Kang, Y Sun, Y Zheng, K Wei, H Wu, Y Zhao, X Liu, G Zhang IEEE Transactions on Electron Devices 68 (3), 1369-1373, 2021 | 16 | 2021 |
| First demonstration of L-band high-power limiter with GaN Schottky barrier diodes (SBDs) based on steep-mesa technology Y Sun, X Kang, S Deng, Y Zheng, K Wei, L Xu, H Wu, X Liu Electronics 10 (4), 433, 2021 | 7 | 2021 |
| Analysis of reverse leakage mechanism in recess-free thin-barrier AlGaN/GaN Schottky barrier diode H Wu, X Kang, Y Zheng, K Wei, Y Sun, P Li, X Liu, G Zhang Japanese Journal of Applied Physics 60 (2), 024002, 2021 | 7 | 2021 |
| Compensation method for die shift in fan-out packaging Y Sun, F Hou, F Chen, H Liu, H Zhang, P Sun, T Lin, L Cao 2018 19th International Conference on Electronic Packaging Technology (ICEPT …, 2018 | 2 | 2018 |
| High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation Y Sun, X Kang, S Deng, Y Zheng, K Wei, L Xu, H Wu, X Liu Semiconductor Science and Technology 36 (3), 03LT01, 2021 | 1 | 2021 |
| Quasi-vertical Gallium Nitride Diodes for Microwave Power Applications Y Sun | | 2022 |
Guo Qi ZhangProfessor, delft university of technology在 tudelft.nl 的电子邮件经过验证
Guo Qi ZhangProfessor, delft university of technology在 tudelft.nl 的电子邮件经过验证