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Maneesha Rupakula
Maneesha Rupakula
在 epfl.ch 的电子邮件经过验证
标题
引用次数
引用次数
年份
Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors
J Zhang, M Rupakula, F Bellando, E Garcia Cordero, J Longo, ...
ACS sensors 4 (8), 2039-2047, 2019
702019
Sweat Biomarker Sensor Incorporating Pico-Watt, 3D-Extended Metal Gate ISFETs.
J Zhang, M Rupakula, F Bellando, E Garcia-Cordero, J Longo, ...
ACS sensors, 2019
70*2019
All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing
JR Zhang, M Rupakula, F Bellando, EG Cordero, J Longo, F Wildhaber, ...
2018 IEEE International Electron Devices Meeting (IEDM), 12.1. 1-12.1. 4, 2018
182018
Impact of electron effective mass variation on the performance of InAs/GaSb Electron-Hole Bilayer Tunneling Field-Effect Transistor
JL Padilla, C Medina-Bailon, M Rupakula, C Alper, C Sampedro, F Gámiz, ...
2018 Joint International EUROSOI Workshop and International Conference on …, 2018
52018
CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity
JR Zhang, F Bellando, M Rupakula, EG Cordero, N Ebejer, J Longo, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
32018
Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing
M Rupakula, J Zhang, F Bellando, F Wildhaber, C Convertino, H Schmid, ...
ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019
2019
High Aspect Ratio InAs-on-Insulator fins in Silicon Substrate Towards Logic Applications
M Rupakula, C Convertino, H Schmid, K Moselund, A Ionescu
IEEE Silicon Nanoelectronics Workshop, 2018
2018
Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices
M Rupakula, WA Vitale
42nd Micro Nano Engineering, 2016
2016
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