| Crossbar Arrays based on “Wall” Phase-Change Memory (PCM) and Ovonic-Threshold Switching (OTS) Selector: a Device Integration Challenge Towards New Computing Paradigms in … G Bourgeois, V Meli, R Antonelli, C Socquet-Clerc, T Magis, F Laulagnet, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | 3 | 2023 |
| Effects of Carbon Lateral Implantation in Ge-rich GeSbTe Phase-Change Memory C De Camaret, G Bourgeois, R Antonelli, F Mazen, M Coig, F Milesi, ... IEEE Electron Device Letters, 2025 | | 2025 |
| Investigation of the Reading Reliability in OTS+ PCM Devices based on DPSA Structure R Antonelli, G Bourgeois, V Meli, Z Saghi, M Bernard, L Fellouh, ... ESREF2024 35 th European Symposium on Reliability of electron devices …, 2024 | | 2024 |
| Reading reliability in 1S1R OTS+ PCM devices based on Double-Patterned Self-Aligned structure R Antonelli, G Bourgeois, V Meli, Z Saghi, T Monniez, S Martin, ... ESREF 2024-35th European Symposium on Reliability of Electron Devices …, 2024 | | 2024 |
| Programming Operations Analysis and Statistics in One Selector and One Memory Ovonic Threshold Switching + Phase-Change Memory Double-Patterned Self-Aligned Structure R Antonelli, G Bourgeois, S Martin, V Meli, N Castellani, A Salvi, S Gout, ... physica status solidi (RRL)–Rapid Research Letters, 2024 | | 2024 |
| Programming Characteristics in Innovative 1S1R “DPSA” Wall PCM+ OTS Devices R Antonelli, G Bourgeois, S Martin, V Meli, N Castellani, A Salvi, ... European Phase Change and Ovonic Symposium (E\PCOS), 2023 | | 2023 |
| Phase-Change Memory and OTS Selectors: A Challenge for the Future of Computing R Antonelli Politecnico di Torino, 2022 | | 2022 |
