| Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer S Koveshnikov, W Tsai, I Ok, JC Lee, V Torkanov, M Yakimov, ... Applied physics letters 88 (2), 2006 | 233 | 2006 |
| Mitigation of perfluorosulfonic acid membrane chemical degradation using cerium and manganese ions FD Coms, H Liu, JE Owejan ECS transactions 16 (2), 1735, 2008 | 224 | 2008 |
| High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon S Oktyabrsky, V Tokranov, M Yakimov, R Moore, S Koveshnikov, W Tsai, ... Materials Science and Engineering: B 135 (3), 272-276, 2006 | 98 | 2006 |
| Exciton-lattice polaritons in multiple-quantum-well-based photonic crystals D Goldberg, LI Deych, AA Lisyansky, Z Shi, VM Menon, V Tokranov, ... Nature Photonics 3 (11), 662-666, 2009 | 89 | 2009 |
| Self-Aligned n-and p-channel GaAs MOSFETs on undoped and p-type substrates using HfO2 and silicon interface passivation layer IJ Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 83 | 2006 |
| Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs N Goel, D Heh, S Koveshnikov, I Ok, S Oktyabrsky, V Tokranov, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 75 | 2008 |
| Enhanced thermal stability of laser diodes with shape-engineered quantum dot medium V Tokranov, M Yakimov, A Katsnelson, M Lamberti, S Oktyabrsky Applied physics letters 83 (5), 833-835, 2003 | 55 | 2003 |
| Complete voltage recovery in quantum dot solar cells due to suppression of electron capture A Varghese, M Yakimov, V Tokranov, V Mitin, K Sablon, A Sergeev, ... Nanoscale 8 (13), 7248-7256, 2016 | 42 | 2016 |
| Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer A Greene, S Madisetti, P Nagaiah, M Yakimov, V Tokranov, R Moore, ... Solid-state electronics 78, 56-61, 2012 | 40 | 2012 |
| Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces DM Zhernokletov, H Dong, B Brennan, M Yakimov, V Tokranov, ... Applied Physics Letters 102 (13), 2013 | 35 | 2013 |
| Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer HS Kim, I Ok, M Zhang, T Lee, F Zhu, L Yu, JC Lee, S Koveshnikov, ... Applied Physics Letters 89 (22), 2006 | 35 | 2006 |
| AlGaAsSb superlattice buffer layer for p-channel GaSb quantum well on GaAs substrate V Tokranov, P Nagaiah, M Yakimov, RJ Matyi, S Oktyabrsky Journal of Crystal Growth 323 (1), 35-38, 2011 | 31 | 2011 |
| Optically decoupled loss modulation in a duo-cavity VCSEL J Van Eisden, M Yakimov, V Tokranov, M Varanasi, EM Mohammed, ... IEEE Photonics Technology Letters 20 (1), 42-44, 2007 | 31 | 2007 |
| Mobility and remote scattering in buried InGaAs quantum well channels with high-k gate oxide P Nagaiah, V Tokranov, M Yakimov, S Koveshnikov, S Oktyabrsky, ... Journal of Vacuum Science & Technology B 28 (3), C3H5-C3H9, 2010 | 26 | 2010 |
| Control of Wigner localization and electron cavity effects in near-field emission spectra of In (Ga) P/GaInP quantum-dot structures AM Mintairov, J Kapaldo, JL Merz, S Rouvimov, DV Lebedev, ... Physical Review B 97 (19), 195443, 2018 | 23 | 2018 |
| Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAlO3 gate oxide S Koveshnikov, C Adamo, V Tokranov, M Yakimov, R Kambhampati, ... Applied Physics Letters 93 (1), 2008 | 23 | 2008 |
| Metal gate HfO2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition IJ Ok, H Kim, M Zhang, F Zhu, S Park, J Yum, S Koveshnikov, W Tsai, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 23 | 2007 |
| Modulation properties of VCSEL with intracavity modulator J Van Eisden, M Yakimov, V Tokranov, M Varanasi, EM Mohammed, ... Vertical-Cavity Surface-Emitting Lasers XI 6484, 84-93, 2007 | 22 | 2007 |
| Dynamic control of AlGaN/GaN HEMT characteristics by implementation of a p-GaN body-diode-based back-gate I Mahaboob, M Yakimov, K Hogan, E Rocco, S Tozier, ... IEEE Journal of the Electron Devices Society 7, 581-588, 2019 | 20 | 2019 |
| Room-temperature defect tolerance of band-engineered InAs quantum dot heterostructures S Oktyabrsky, M Lamberti, V Tokranov, G Agnello, M Yakimov Journal of applied physics 98 (5), 2005 | 20 | 2005 |
