| Statistical analysis of the electrothermal imbalances of mismatched parallel SiC power MOSFETs A Borghese, M Riccio, A Fayyaz, A Castellazzi, L Maresca, G Breglio, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 50 | 2019 |
| SiC MOSFETs soft and hard failure modes: functional analysis and structural characterization F Richardeau, F Boige, A Castellazzi, V Chazal, A Fayyaz, A Borghese, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 22 | 2020 |
| Compact modeling of a 3.3 kv sic mosfet power module for detailed circuit-level electrothermal simulations including parasitics C Scognamillo, AP Catalano, M Riccio, V d’Alessandro, L Codecasa, ... Energies 14 (15), 4683, 2021 | 21 | 2021 |
| Gate-damage accumulation and off-line recovery in SiC power MOSFETs with soft short-circuit failure mode A Castellazzi, F Richardeau, A Borghese, F Boige, A Fayyaz, A Irace, ... Microelectronics Reliability 114, 113943, 2020 | 16 | 2020 |
| An efficient simulation methodology to quantify the impact of parameter fluctuations on the electrothermal behavior of multichip SiC power modules A Borghese, AP Catalano, M Riccio, L Codecasa, A Fayyaz, ... Materials Science Forum 963, 855-858, 2019 | 15 | 2019 |
| Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs A Borghese, M Riccio, G Longobardi, L Maresca, G Breglio, A Irace Microelectronics Reliability 114, 113762, 2020 | 13 | 2020 |
| Analysis of device and circuit parameters variability in SiC MOSFETs-based multichip power module M Riccio, A Borghese, G Romano, V d'Alessandro, A Fayyaz, ... 2018 20th European Conference on Power Electronics and Applications (EPE'18 …, 2018 | 13 | 2018 |
| Gate driver for p-GaN HEMTs with real-time monitoring capability of channel temperature A Borghese, M Riccio, L Maresca, G Breglio, A Irace 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 12 | 2021 |
| Effect of parameters variability on the performance of SiC MOSFET modules A Borghese, M Riccio, A Fayyaz, A Castellazzi, L Maresca, G Breglio, ... 2018 IEEE International Conference on Electrical Systems for Aircraft …, 2018 | 12 | 2018 |
| Experimental analysis of electro-thermal interaction in normally-off pGaN HEMT devices M Riccio, G Romano, A Borghese, L Maresca, G Breglio, A Irace, ... 2018 IEEE International Conference on Electrical Systems for Aircraft …, 2018 | 11 | 2018 |
| Gate current in p-gan gate hemts as a channel temperature sensitive parameter: A comparative study between schottky-and ohmic-gate gan hemts A Borghese, A Di Costanzo, M Riccio, L Maresca, G Breglio, A Irace Energies 14 (23), 8055, 2021 | 9 | 2021 |
| Statistical electrothermal simulation for lifetime prediction of parallel SiC MOSFETs and modules A Borghese, M Riccio, A Castellazzi, L Maresca, G Breglio, A Irace 2020 2nd IEEE International Conference on Industrial Electronics for …, 2020 | 9 | 2020 |
| TCAD analysis of the impact of the metal-semiconductor junction properties on the forward characteristics of MPS/JBS SiC diodes M Boccarossa, A Borghese, L Maresca, M Riccio, G Breglio, A Irace 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 7 | 2022 |
| Electrothermal modeling, simulation, and electromagnetic characterization of a 3.3 kV SiC mosfet power module C Scognamillo, AP Catalano, A Borghese, M Riccio, V d’Alessandro, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 7 | 2021 |
| Effect of gate-source bias voltage and gate-drain leakage current on the short-circuit performance of FTO-type SiC power MOSFETs F Richardeau, A Borghese, A Castellazzi, A Irace, V Chazal, G Guibaud 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 7 | 2021 |
| Short-circuit and Avalanche Robustness of SiC Power MOSFETs for Aerospace Power Converters A Borghese, M Boccarossa, M Riccio, L Maresca, G Breglio, A Irace 2023 IEEE Aerospace Conference, 1-8, 2023 | 6 | 2023 |
| Aging and failure mechanisms of SiC Power MOSFETs under repetitive short-circuit pulses of different duration A Fayyaz, F Boige, A Borghese, G Guibaud, V Chazal, A Castellazzi, ... International Conference on Silicon Carbide and Related Materials 2019, 2019 | 6 | 2019 |
| An Experimentally Verified 3.3 kV SiC MOSFET Model Suitable for High-Current Modules Design A Borghese, M Riccio, L Maresca, G Breglio, A Irace, G Romano, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 6 | 2019 |
| IoT Node Interrogation System for Fiber Bragg Grating Sensors: Design, Characterization, and On-Field Test VR Marrazzo, F Fienga, A Borghese, E Remondini, C Schettini, L Cafarelli, ... IEEE Transactions on Instrumentation and Measurement 73, 1-8, 2024 | 5 | 2024 |
| Short-Circuit Rugged 1.2 kV SiC MOSFET with a Non-Linear Dielectric Gate Stack M Boccarossa, L Maresca, A Borghese, M Riccio, G Breglio, A Irace, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 4 | 2023 |
