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Yung-Hung Wang
Yung-Hung Wang
在 itri.org.tw 的电子邮件经过验证
标题
引用次数
引用次数
年份
Co-morbid anxiety disorders in bipolar disorder and major depression: familial aggregation and clinical characteristics of co-morbid panic disorder, social phobia, specific …
FS Goes, MG McCusker, OJ Bienvenu, DF Mackinnon, FM Mondimore, ...
Psychological medicine 42 (7), 1449-1459, 2012
1582012
In-situ formed capping layer in MTJ devices
YH Wang, YJ Wang, M Juang, CS Tsai
US Patent 7,723,128, 2010
1142010
Interfacial and annealing effects on magnetic properties of CoFeB thin films
YH Wang, WC Chen, SY Yang, KH Shen, C Park, MJ Kao, MJ Tsai
Journal of applied physics 99 (8), 2006
1092006
Structure and access method for magnetic memory cell and circuit of magnetic memory
CC Hung, YH Chen, MJ Kao, YJ Lee, YH Wang
US Patent 7,515,458, 2009
1042009
Adjacent-reference and self-reference sensing scheme with novel orthogonal wiggle MRAM cell
CC Hung, YS Chen, DY Wang, YJ Lee, WC Chen, YH Wang, CT Yen, ...
2006 International electron devices meeting, 1-4, 2006
1042006
Exchange-bias-induced double-shifted magnetization curves in Co biaxial films
CH Lai, YH Wang, CR Chang, JS Yang, YD Yao
Physical review B 64 (9), 094420, 2001
522001
Spin torque transfer MTJ devices with high thermal stability and low write currents
YS Chen, YH Wang, YJ Wang, CJ Lin
US Patent App. 12/133,865, 2009
372009
Magnetic memory device
S Chih-Ta, YH Wang, YEN Cheng-Tying, KH Shen, WC Chen, SY Yang
US Patent 7,606,063, 2009
372009
Investigation of perpendicular magnetic anisotropy of CoFeB by x-ray magnetic circular dichroism
WC Tsai, SC Liao, HC Hou, CT Yen, YH Wang, HM Tsai, FH Chang, ...
Applied Physics Letters 100 (17), 2012
362012
Effect of adjacent layers on crystallization and magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junction
C Park, YH Wang, DE Laughlin, JG Zhu
IEEE transactions on magnetics 42 (10), 2639-2641, 2006
292006
Impact of stray field on the switching properties of perpendicular MTJ for scaled MRAM
YH Wang, SH Huang, DY Wang, KH Shen, CW Chien, KM Kuo, SY Yang, ...
2012 International Electron Devices Meeting, 29.2. 1-29.2. 4, 2012
262012
High thermal stability and low Gilbert damping constant of CoFeB/MgO bilayer with perpendicular magnetic anisotropy by Al capping and rapid thermal annealing
DS Wang, SY Lai, TY Lin, CW Chien, D Ellsworth, LW Wang, JW Liao, ...
Applied Physics Letters 104 (14), 2014
242014
Effects of molybdenum on the precursors of chlorophyll biosynthesis in winter wheat cultivars under low temperature.
YM Yu Min, HCX Hu ChengXiao, WYH Wang YunHua
242006
Magnetic tunnel junction devices and magnetic random access memory
WC Chen, YH Wang, SY Yang, KH Shen
US Patent 7,583,529, 2009
212009
Magnetic random access memory
CT Yen, YH Wang
US Patent 8,421,171, 2013
202013
Magnetoresistive device with perpendicular magnetization
YH Wang, CT Yen, SY Yang
US Patent App. 12/713,193, 2011
192011
Molecular chain structure of doped polyaniline
景遐斌, 唐劲松, 王英, 雷良才, 王宝忱, 王佛松
中国科学: 化学英文版, 787-794, 1990
191990
High density and low power design of MRAM
CC Hung, MJ Kao, YS Chen, YH Wang, HH Hsu, CM Chen, YJ Lee, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
162004
Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme
CC Hung, YJ Lee, MJ Kao, YH Wang, RF Huang, WC Chen, YS Chen, ...
Applied physics letters 88 (11), 2006
152006
Method and apparatus of relative datapath cell placement with structure bonding
TW Ku, SA Woodward, YH Wang, DP Chen, WK Chia
US Patent 6,792,585, 2004
152004
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