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Kah-Wee ANG, Ph.D.
Kah-Wee ANG, Ph.D.
National University of Singapore
在 ieee.org 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization
TY Liow, KW Ang, Q Fang, JF Song, YZ Xiong, MB Yu, GQ Lo, DL Kwong
IEEE Journal of Selected Topics in Quantum Electronics 16 (1), 307-315, 2009
3222009
Artificial synapses based on multiterminal memtransistors for neuromorphic application
L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
2322019
Monolithic polarization and phase diversity coherent receiver in silicon
CR Doerr, PJ Winzer, YK Chen, S Chandrasekhar, MS Rasras, L Chen, ...
Journal of lightwave technology 28 (4), 520-525, 2010
2212010
Waveguide-integrated black phosphorus photodetector for mid-infrared applications
L Huang, B Dong, X Guo, Y Chang, N Chen, X Huang, W Liao, C Zhu, ...
ACS nano 13 (1), 913-921, 2018
2152018
A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy
X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ...
Advanced Electronic Materials 5 (12), 1900740, 2019
1892019
High performance field-effect transistor based on multilayer tungsten disulfide
X Liu, J Hu, C Yue, N Della Fera, Y Ling, Z Mao, J Wei
ACS nano 8 (10), 10396-10402, 2014
1842014
Al‐doped black phosphorus p–n homojunction diode for high performance photovoltaic
Y Liu, Y Cai, G Zhang, YW Zhang, KW Ang
Advanced Functional Materials 27 (7), 1604638, 2017
1802017
2D photovoltaic devices: progress and prospects
L Wang, L Huang, WC Tan, X Feng, L Chen, X Huang, KW Ang
Small Methods 2 (3), 1700294, 2018
1642018
Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions
KW Ang, KJ Chui, V Bliznetsov, A Du, N Balasubramanian, MF Li, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
1622004
Zero-bias mid-infrared graphene photodetectors with bulk photoresponse and calibration-free polarization detection
J Wei, Y Li, L Wang, W Liao, B Dong, C Xu, C Zhu, KW Ang, CW Qiu, ...
Nature communications 11 (1), 6404, 2020
1532020
Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries
Y Li, L Loh, S Li, L Chen, B Li, M Bosman, KW Ang
Nature Electronics 4 (5), 348-356, 2021
1522021
Lattice strain analysis of transistor structures with silicon–germanium and silicon–carbon source∕ drain stressors
KW Ang, KJ Chui, V Bliznetsov, CH Tung, A Du, N Balasubramanian, ...
Applied Physics Letters 86 (9), 2005
1482005
Few‐layer black phosphorus carbide field‐effect transistor via carbon doping
WC Tan, Y Cai, RJ Ng, L Huang, X Feng, G Zhang, YW Zhang, CA Nijhuis, ...
Advanced Materials 29 (24), 1700503, 2017
1452017
WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability
Q Fang, TY Liow, JF Song, KW Ang, MB Yu, GQ Lo, DL Kwong
Optics express 18 (5), 5106-5113, 2010
1392010
Wearable triboelectric–human–machine interface (THMI) using robust nanophotonic readout
B Dong, Y Yang, Q Shi, S Xu, Z Sun, S Zhu, Z Zhang, DL Kwong, G Zhou, ...
ACS nano 14 (7), 8915-8930, 2020
1372020
Hardware implementation of neuromorphic computing using large‐scale memristor crossbar arrays
Y Li, KW Ang
Advanced Intelligent Systems 3 (1), 2000137, 2021
1332021
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment
B Tang, ZG Yu, L Huang, J Chai, SL Wong, J Deng, W Yang, H Gong, ...
ACS nano 12 (3), 2506-2513, 2018
1252018
Wafer‐scale 2D hafnium diselenide based memristor crossbar array for energy‐efficient neural network hardware
S Li, ME Pam, Y Li, L Chen, YC Chien, X Fong, D Chi, KW Ang
Advanced Materials 34 (25), 2103376, 2022
1242022
Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric
P Xia, X Feng, RJ Ng, S Wang, D Chi, C Li, Z He, X Liu, KW Ang
Scientific reports 7 (1), 40669, 2017
1192017
Large-scale two-dimensional MoS2 photodetectors by magnetron sputtering
ZP Ling, R Yang, JW Chai, SJ Wang, WS Leong, Y Tong, D Lei, Q Zhou, ...
Optics express 23 (10), 13580-13586, 2015
1152015
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