| Highly linear high-power 802.11 ac/ax WLAN SiGe HBT power amplifiers with a compact 2nd-harmonic-shorted four-way transformer and a thermally compensating dynamic bias circuit I Ju, Y Gong, JD Cressler IEEE Journal of Solid-State Circuits 55 (9), 2356-2370, 2020 | 35 | 2020 |
| A compact, high-power, 60 GHz SPDT switch using shunt-series SiGe PIN diodes Y Gong, JW Teng, JD Cressler 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 15-18, 2019 | 14 | 2019 |
| A 60-GHz SiGe power amplifier with three-conductor transmission-line-based Wilkinson baluns and asymmetric directional couplers Y Gong, JD Cressler IEEE Transactions on Microwave Theory and Techniques 69 (1), 709-722, 2020 | 11 | 2020 |
| A bi-directional, X-band 6-Bit phase shifter for phased array antennas using an active DPDT switch Y Gong, MK Cho, JD Cressler 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 288-291, 2017 | 10 | 2017 |
| A 28-GHz switchless, SiGe bidirectional amplifier using neutralized common-emitter differential pair Y Gong, MK Cho, I Song, JD Cressler IEEE Microwave and Wireless Components Letters 28 (8), 717-719, 2018 | 9 | 2018 |
| Single-event effects in a millimeter-wave receiver front-end implemented in 90 nm, 300 GHz SiGe HBT technology S Zeinolabedinzadeh, AC Ulusoy, F Inanlou, H Ying, Y Gong, ... IEEE Transactions on Nuclear Science 64 (1), 536-543, 2016 | 9 | 2016 |
| PNP-based RF switches for the mitigation of single-event transients in a complementary SiGe BiCMOS platform I Song, MK Cho, ZE Fleetwood, Y Gong, S Pavlidis, SP Buchner, ... IEEE Transactions on Nuclear Science 65 (1), 391-398, 2017 | 8 | 2017 |
| A broadband logarithmic power detector using 130 nm SiGe BiCMOS technology Y Gong, S Lee, H Ying, AP Omprakash, E Gebara, H Gu, C Nicholls, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 7 | 2019 |
| Next generation of automotive radar with leading-edge advances in SiGe devices and glass panel embedding (GPE) T Shi, Y Gong, S Ravichandran, V Sundaram, JD Cressler, R Tummala 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), 1245-1250, 2018 | 7 | 2018 |
| A balanced power amplifier with asymmetric coupled-line couplers and Wilkinson baluns in a 90 nm SiGe BiCMOS technology Y Gong, JD Cressler 2020 IEEE/MTT-S International Microwave Symposium (IMS), 1097-1100, 2020 | 4 | 2020 |
| Design of an 18–50 GHz SiGe HBT cascode non-uniform distributed power amplifier S Lee, I Ju, Y Gong, AS Cardoso, JD Connor, MK Cho, JD Cressler 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2020 | 2 | 2020 |
| Performance Improvements of Reverse-Saturated SiGe HBT Millimeter-Wave Switches with Floating Emitter Configuration Y Gong, HP Lee, JD Cressler 2021 IEEE MTT-S International Microwave Symposium (IMS), 573-576, 2021 | 1 | 2021 |
| RADIO FREQUENCY AND MILLIMETER WAVE CIRCUIT COMPONENT DESIGN WITH SIGE BICMOS TECHNOLOGY Y Gong Georgia Institute of Technology, 2020 | | 2020 |
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia Tech在 ece.gatech.edu 的电子邮件经过验证
