| Comprehensive review on electrical noise analysis of TFET structures S Chander, SK Sinha, R Chaudhary Superlattices and Microstructures 161, 107101, 2022 | 37 | 2022 |
| Ge-source based L-shaped tunnel field effect transistor for low power switching application S Chander, SK Sinha, R Chaudhary, A Singh Silicon, 1-14, 2021 | 25 | 2021 |
| Green Lean Six Sigma for sustainability improvement: A systematic review and future research agenda V Yadav, MS Kaswan, P Gahlot, RK Duhan, JA Garza-Reyes, R Rathi, ... International Journal of Lean Six Sigma 14 (4), 759-790, 2023 | 22 | 2023 |
| Fabrication and characterisation of Al gate n‐metal–oxide–semiconductor field‐effect transistor, on‐chip fabricated with silicon nitride ion‐sensitive field‐effect … R Chaudhary, A Sharma, S Sinha, J Yadav, R Sharma, R Mukhiya, ... IET Computers & Digital Techniques 10 (5), 268-272, 2016 | 21 | 2016 |
| A systematic review of Industry 5.0 from main aspects to the execution status U Kumar, MS Kaswan, R Kumar, R Chaudhary, JA Garza-Reyes, R Rathi, ... The TQM Journal, 2023 | 13 | 2023 |
| Simulation of MOSFET with different dielectric films R Chaudhary, R Mukhiya, GS Patel, PR Mudimela, R Sharma 2018 International Conference on Intelligent Circuits and Systems (ICICS …, 2018 | 13 | 2018 |
| Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors S Chander, SK Sinha, R Chaudhary, R Goswami Semiconductor Science and Technology 37 (7), 075011, 2022 | 11 | 2022 |
| Pull-in response and eigen frequency analysis of graphene oxide-based NEMS switch R Chaudhary, PR Mudimela Materials Today: Proceedings 28, 196-200, 2020 | 11 | 2020 |
| 3D modeling of graphene oxide based nanoelectromechanical capacitive switch R Chaudhary, PR Mudimela Microsystem Technologies 26 (9), 2931-2937, 2020 | 10 | 2020 |
| Finite element analysis of graphene oxide hinge structure-based RF NEM switch R Chaudhary, P Jhanwar, PR Mudimela IETE Journal of Research 69 (2), 967-974, 2023 | 8 | 2023 |
| Investigation of noise characteristics in gate-source overlap tunnel field-effect transistor SK Sinha, S Chander, R Chaudhary Silicon 14 (16), 10661-10668, 2022 | 8 | 2022 |
| Comprehensive review of low pull-in voltage RF NEMS switches R Chaudhary, PR Mudimela Microsystem Technologies 29 (1), 19-33, 2023 | 7 | 2023 |
| Graphene cantilever-based digital logic gates PR Mudimela, R Chaudhary Journal of Computational Electronics 20 (1), 81-87, 2021 | 7 | 2021 |
| Simulation and characterization of dual-gate SOI MOSFET, on-chip fabricated with ISFET J Yadav, S Sinha, A Sharma, R Chaudhary, R Mukhiya, R Sharma, ... 2015 19th International Symposium on VLSI Design and Test, 1-5, 2015 | 5 | 2015 |
| Simulation study of multi-source hetero-junction tfet-based capacitor less 1t dram for low power applications S Chander, SK Sinha, R Chaudhary Materials Science and Engineering: B 300, 117080, 2024 | 4 | 2024 |
| Comprehensive study of RF analysis of G/GO-based NEMS shunt switch R Chaudhary, PR Mudimela Microsystem Technologies 28 (4), 1069-1075, 2022 | 4 | 2022 |
| Performance analysis of NEMS switch using graphene derivative based composite beam R Chaudhary, PR Mudimela IEEE Transactions on Nanotechnology 20, 441-448, 2021 | 4 | 2021 |
| Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si3N4ISFET R Chaudhary, A Sharma, S Sinha, J Yadav, R Sharma, R Mukhiya, ... 2015 19th International Symposium on VLSI Design and Test, 1-4, 2015 | 4 | 2015 |
| Prospects and challenges of different geometries of TFET devices for IoT applications S Chander, SK Sinha, R Chaudhary Nanoscience & Nanotechnology-Asia 13 (4), 47-56, 2023 | 3 | 2023 |
| Finite element analysis of graphene oxide based nanoelectromechanical capacitive switch R Chaudhary, PR Mudimela Beilstein Arch. 83, 201983, 2019 | 3 | 2019 |
Dr. Sweta ChanderLovely Professional University在 lpu.co.in 的电子邮件经过验证
