Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure A Alguno, N Usami, T Ujihara, K Fujiwara, G Sazaki, K Nakajima, ... Applied Physics Letters 83 (6), 1258-1260, 2003 | 145 | 2003 |
In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy G Sazaki, T Matsui, K Tsukamoto, N Usami, T Ujihara, K Fujiwara, ... Journal of Crystal Growth 262 (1-4), 536-542, 2004 | 132 | 2004 |
Grain growth behaviors of polycrystalline silicon during melt growth processes K Fujiwara, Y Obinata, T Ujihara, N Usami, G Sazaki, K Nakajima Journal of crystal growth 266 (4), 441-448, 2004 | 125 | 2004 |
High-efficiency conversion of threading screw dislocations in 4H-SiC by solution growth Y Yamamoto, S Harada, K Seki, A Horio, T Mitsuhashi, T Ujihara Applied physics express 5 (11), 115501, 2012 | 113 | 2012 |
Super-high brightness and high-spin-polarization photocathode X Jin, N Yamamoto, Y Nakagawa, A Mano, T Kato, M Tanioku, T Ujihara, ... Applied physics express 1 (4), 045002, 2008 | 104 | 2008 |
Minority carrier lifetime in polycrystalline silicon solar cells studied by photoassisted Kelvin probe force microscopy M Takihara, T Takahashi, T Ujihara Applied Physics Letters 93 (2), 2008 | 95 | 2008 |
Improvement mechanism of sputtered AlN films by high-temperature annealing S Xiao, R Suzuki, H Miyake, S Harada, T Ujihara Journal of Crystal Growth 502, 41-44, 2018 | 93 | 2018 |
Lipid Bilayer Membrane with Atomic Step Structure: Supported Bilayer on a Step-and-Terrace TiO2(100) Surface R Tero, T Ujihara, T Urisu Langmuir 24 (20), 11567-11576, 2008 | 93 | 2008 |
High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP superlattice layers N Yamamoto, T Nakanishi, A Mano, Y Nakagawa, S Okumi, M Yamamoto, ... Journal of Applied Physics 103 (6), 2008 | 88 | 2008 |
In situ observations of crystal growth behavior of silicon melt K Fujiwara, K Nakajima, T Ujihara, N Usami, G Sazaki, H Hasegawa, ... Journal of crystal growth 243 (2), 275-282, 2002 | 85 | 2002 |
In-situ observations of melt growth behavior of polycrystalline silicon K Fujiwara, Y Obinata, T Ujihara, N Usami, G Sazaki, K Nakajima Journal of crystal growth 262 (1-4), 124-129, 2004 | 79 | 2004 |
Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique K Kusunoki, N Okada, K Kamei, K Moriguchi, H Daikoku, M Kado, ... Journal of crystal growth 395, 68-73, 2014 | 76 | 2014 |
30-kV spin-polarized transmission electron microscope with GaAs–GaAsP strained superlattice photocathode M Kuwahara, S Kusunoki, XG Jin, T Nakanishi, Y Takeda, K Saitoh, ... Applied Physics Letters 101 (3), 2012 | 75 | 2012 |
Real time magnetic imaging by spin-polarized low energy electron microscopy with highly spin-polarized and high brightness electron gun M Suzuki, M Hashimoto, T Yasue, T Koshikawa, Y Nakagawa, T Konomi, ... Applied physics express 3 (2), 026601, 2010 | 73 | 2010 |
Kinetic analysis of spinodal decomposition process in Fe–Cr alloys by small angle neutron scattering T Ujihara, K Osamura Acta materialia 48 (7), 1629-1637, 2000 | 72 | 2000 |
Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method Y Yamamoto, S Harada, K Seki, A Horio, T Mitsuhashi, D Koike, ... Applied Physics Express 7 (6), 065501, 2014 | 71 | 2014 |
Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions T Mitani, N Komatsu, T Takahashi, T Kato, K Fujii, T Ujihara, Y Matsumoto, ... Journal of crystal growth 401, 681-685, 2014 | 70 | 2014 |
High-speed prediction of computational fluid dynamics simulation in crystal growth Y Tsunooka, N Kokubo, G Hatasa, S Harada, M Tagawa, T Ujihara CrystEngComm 20 (41), 6546-6550, 2018 | 67 | 2018 |
In situ growth of superconducting NdFeAs (O, F) thin films by molecular beam epitaxy T Kawaguchi, H Uemura, T Ohno, M Tabuchi, T Ujihara, K Takenaka, ... Applied Physics Letters 97 (4), 2010 | 64 | 2010 |
Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal–melt interface using in situ monitoring system Y Azuma, N Usami, T Ujihara, G Sazaki, Y Murakami, S Miyashita, ... Journal of crystal growth 224 (3-4), 204-211, 2001 | 63 | 2001 |