Reversible full/half adder with optimum power dissipation M Aditya, YBN Kumar, MH Vasantha 2016 10th International Conference on Intelligent Systems and Control (ISCO …, 2016 | 22 | 2016 |
Design and performance analysis of advanced MOSFET structures M Aditya, KS Rao Transactions on Electrical and Electronic Materials 23 (3), 219-227, 2022 | 18 | 2022 |
An intensive approach to optimize capacitive type RF MEMS shunt switch PA Kumar, KS Rao, KG Sravani, B Balaji, M Aditya, K Guha, A Elsinawi Microelectronics Journal 112, 105050, 2021 | 17 | 2021 |
Implementation of low-power 1-bit hybrid full adder with reduced area B Balaji, M Aditya, G Adithya, M Sai Priyanka, CK Ayyappa Vijay VVSSK IJITEE 8 (7), 61-64, 2019 | 13 | 2019 |
Low pull-in-voltage RF-MEMS shunt switch for 5G millimeter wave applications PA Kumar, KS Rao, B Balaji, M Aditya, NP Maity, R Maity, S Maity, ... Transactions on electrical and electronic materials 22, 821-832, 2021 | 11 | 2021 |
Comparison of drain current characteristics of advanced MOSFET structures-a review M Aditya, KS Rao, B Balaji, KG Sravani Silicon 14 (14), 8269-8276, 2022 | 9 | 2022 |
Design, simulation and analysis of high-K gate dielectric FinField effect transistor M Aditya, K Srinivasa Rao, KG Sravani, K Guha International Journal of Nano Dimension 12 (3), 305-309, 2021 | 9 | 2021 |
A novel low-power 5th order analog to digital converter for biomedical applications M Aditya, IV Rao, B Balaji, B John Philip, N Ajay Nagendra, SV Krishna Int J Innov Technol Exploring Eng 8 (7), 217-220, 2019 | 9 | 2019 |
Simulation and Drain Current Performance analysis of High-K Gate Dielectric FinFET M Aditya, KS Rao, KG Sravani, K Guha Silicon, 1-4, 2022 | 8 | 2022 |
Design, simulation and analysis of uniform and non-uniform serpentine step structure RF MEMS switch KG Sravani, K Guha, M Aditya, B Balaji, KS Rao Microsystem Technologies 28 (3), 855-865, 2022 | 7 | 2022 |
A qualitative review on tunnel field effect transistor-operation, advances, and applications SS Sravani, B Balaji, KS Rao, AN Babu, M Aditya, KG Sravani Silicon 14 (15), 9263-9273, 2022 | 6 | 2022 |
Device design, simulation and qualitative analysis of gaasp/6h-sic/gan metal semiconductor field effect transistor B Balaji, KS Rao, M Aditya, KG Sravani Silicon 14 (14), 8449-8454, 2022 | 5 | 2022 |
Design, performance analysis of gaas/6h-sic/algan metal semiconductor fet in submicron technology B Balaji, KS Rao, KG Sravani, M Aditya Silicon, 1-5, 2022 | 5 | 2022 |
Simulation and drain current performance analysis of high-K gate dielectric FinFET. Silicon M Aditya, KS Rao, KG Sravani, K Guha | 5 | 2021 |
An Investigation on various Text Information Extraction (TIE) Algorithms for Images KK Kumar, ME Paramasivam, P Anandan, PM Dinesh, RS Sabeenian International Journal 8 (9), 2020 | 1 | 2020 |
Design and Analysis of HEMT by 5 nm Technology GS Kondavitee, KS Rao, M Suman, B Pravallika, KS Annapurna, ... Silicon 15 (5), 2199-2209, 2023 | | 2023 |
Impact of High-K Gate Dielectric Materials on Uniformly Doped Dual Gate FinFET for Analog and Digital Applications M Aditya, KS Rao Silicon 14 (16), 10623-10635, 2022 | | 2022 |
DESIGN AND PERFORMANCE ANALYSIS OF FULL ADDER USING 6-T XOR–XNOR CELL KS Rao, M Aditya, BSDK Raja, CH Manisai, MTS Reddy, KG Sravani Facta Universitatis, Series: Electronics and Energetics 35 (2), 187-198, 2022 | | 2022 |
Design and Performance Analysis of InGaN/InAlGaN HEMT in 10nm Technology B Balaji, M Aditya Annals of the Romanian Society for Cell Biology, 4207-4212, 2021 | | 2021 |
Improved Performance Analysis of Ingaasp Mesfet for Higher Power Applications B Balaji, M Aditya, P Pandariboina, AP Chowdary, J Talluri Annals of the Romanian Society for Cell Biology 25 (3), 7374-7379, 2021 | | 2021 |