| Effect of temperature and carrier gas on the properties of thick InxAl1-xN layer P Chauhan, S Hasenöhrl, E Dobročka, Ľ Vančo, R Stoklas, J Kováč, ... Applied Surface Science 470, 1-7, 2018 | 14 | 2018 |
| Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD P Chauhan, S Hasenöhrl, E Dobročka, MP Chauvat, A Minj, F Gucmann, ... Journal of Applied Physics 125 (10), 105304, 2019 | 12 | 2019 |
| Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer P Chauhan, S Hasenöhrl, A Minj, MP Chauvat, P Ruterana, J Kuzmík Applied Surface Science 502, 144086, 2020 | 10 | 2020 |
| Low resistive InGaN film grown by metalorganic chemical vapor deposition NM Shrestha, P Chauhan, YY Wong, Y Li, S Samukawa, EY Chang Vacuum 171, 108974, 2020 | 8 | 2020 |
| Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures PRJK Stanislav Hasenöhrl, Prerna Chauhan, Edmund Dobročka, Roman Stoklas ... Applied Physics Express 12 (1), 014001-4, 2018 | 7 | 2018 |
| Non-conventional scans in high-resolution X-ray diffraction analysis of epitaxial systems E Dobročka, S Hasenöhrl, P Chauhan, J Kuzmík Applied Surface Science 461, 23-32, 2018 | 6 | 2018 |
| Fabrication of InGaN/Si (111) nanowire heterostructure photoanode for hydrogen generation under visible light L Ravi, P Chauhan, K Boopathi Appl. Phys. Lett. 119 (15), 153901 (1-7), 2021 | 5 | 2021 |
| A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl (Ga) N layers: a complete depth-resolved investigation P Chauhan, S Hasenöhrl, Ľ Vančo, P Šiffalovič, E Dobročka, D Machajdík, ... CrystEngComm 22 (1), 130-141, 2020 | 4 | 2020 |
| Study of Pharmaceutical Samples using Optical Emission Spectroscopy and Microscopy V Dwivedi, P Chauhan, GS Maurya, AM Roldán, P Veis, AK Pathak Laser Physics 32 (7), 075604, 2022 | 2 | 2022 |
| InAl (Ga) N: MOCVD thermodynamics and strain distribution P Chauhan, R Mohamad Journal of Alloys and Compounds 892, 162123, 2022 | 1 | 2022 |
| STUDY OF SURFACE MORPHOLOGY AND OPTICAL PROPERTIES OF INALN EPILAYERS GROWN ON C-SAPPHIRE AT DIFFERENT TEMPERATURES BY P Chauhan, S Hasenöhrl, M Hulman, J Kováč, A Rosová, P Šiffalovič, ... | | 2017 |
| Gucmann, F.,... Kuzmík, J.(2019). Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal of Applied … P Chauhan, S Hasenöhrl, E Dobroka, MP Chauvat, A Minj | | |
| Growth of InAlN buffer by MOCVD P Chauhan, S Hasenöhrl, E Dobročka, R Stoklas, Ľ Vančo, J Kováč | | |
| III-N quantum structures for new generation of ultra-fast transistors P CHAUHAN | | |
| Effect of growth temperature on the structural, electrical and optical properties of the 𝑰𝒏𝒙 𝑨𝒍𝟏− 𝒙 N/GaN heterostructure grown on c-sapphire by MOCVD P Chauhan, S Hasenöhrl, E Dobročka, R Stoklas, J Kuzmík, A Czímerová | | |
