| Analytical drain current compact model in the depletion operation region of short-channel triple-gate junctionless transistors TA Oproglidis, A Tsormpatzoglou, DH Tassis, TA Karatsori, S Barraud, ... IEEE Transactions on Electron Devices 64 (1), 66-72, 2016 | 35 | 2016 |
| Leakage current conduction in metal gate junctionless nanowire transistors TA Oproglidis, TA Karatsori, S Barraud, G Ghibaudo, CA Dimitriadis Solid-State Electronics 131, 20-23, 2017 | 19 | 2017 |
| Effect of temperature on the performance of triple-gate junctionless transistors TA Oproglidis, TA Karatsori, S Barraud, G Ghibaudo, CA Dimitriadis IEEE Transactions on Electron Devices 65 (8), 3562-3566, 2018 | 13 | 2018 |
| Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model TA Oproglidis, DH Tassis, A Tsormpatzoglou, G Ghibaudo, CA Dimitriadis Solid-State Electronics 170, 107835, 2020 | 9 | 2020 |
| Impact of hot carrier aging on the 1/f and random telegraph noise of short-channel triple-gate junctionless MOSFETs TA Oproglidis, TA Karatsori, CG Theodorou, A Tsormpatzoglou, S Barraud, ... IEEE Transactions on Device and Materials Reliability 21 (3), 348-353, 2021 | 8 | 2021 |
| Origin of low-frequency noise in triple-gate junctionless n-MOSFETs TA Oproglidis, TA Karatsori, CG Theodorou, D Tassis, S Barraud, ... IEEE Transactions on Electron Devices 65 (12), 5481-5486, 2018 | 8 | 2018 |
| Upgrade of drain current compact model for nanoscale triple-gate junctionless transistors to continuous and symmetric TA Oproglidis, A Tsormpatzoglou, CG Theodorou, TA Karatsori, ... IEEE Transactions on Electron Devices 66 (10), 4486-4489, 2019 | 6 | 2019 |
| Continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs TA Oproglidis, A Tsormpatzoglou, DH Tassis, CG Theodorou, G Ghibaudo, ... Solid-State Electronics 175, 107945, 2021 | 5 | 2021 |
| Impact of hot carrier aging on the performance of triple-gate junctionless MOSFETs TA Oproglidis, TA Karatsori, CG Theodorou, A Tsormpatzoglou, S Barraud, ... IEEE Transactions on Electron Devices 67 (2), 424-429, 2020 | 5 | 2020 |
| Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport TA Oproglidis, TA Karatsori, S Barraud, G Ghibaudo, CA Dimitriadis Solid-State Electronics 142, 25-30, 2018 | 4 | 2018 |
| Threshold voltage of p-type triple-gate junctionless transistors TA Oproglidis, DH Tassis, A Tsormpatzoglou, TA Karatsori, ... Solid-State Electronics 197, 108451, 2022 | 1 | 2022 |
| Analytical model for the injection recombination current in quantum well micro-light emitting diodes A Tsormpatzoglou, TA Oproglidis, I Pappas, CA Dimitriadis Journal of Applied Physics 134 (15), 2023 | | 2023 |
| Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model (vol 170, 107835, 2020) TA Oproglidis, DH Tassis, A Tsormpatzoglou, G Ghibaudo, CA Dimitriadis SOLID-STATE ELECTRONICS 171, 2020 | | 2020 |
| Corrigendum to" Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model"[Solid-State Electron. 170 (2020) 107835] TA Oproglidis, DH Tassis, A Tsormpatzoglou, G Ghibaudo, CA Dimitriadis Solid State Electronics 171, 107865, 2020 | | 2020 |
| Triple-gate junctionless MOSFETs: compact models for application in circuit simulators T Oproglidis Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Σχολή Θετικών Επιστημών. Τμήμα …, 2020 | | 2020 |
| Optimisation of the catalytic system towards well-defined donor-acceptor semiconductor polymers T Oproglidis, T Karatsori, S Barraud, G Ghibaudo, C Dimitriadis European Congress and Exhibit on Advanced Materials and Processes (EUROMAT …, 2017 | | 2017 |
Babis DimitriadisDepartment of Physics Aristotle University of Thessaloniki, 54124, Greece在 physics.auth.gr 的电子邮件经过验证
