| Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016 | 719 | 2016 |
| Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature Communications 6, 7311, 2015 | 440 | 2015 |
| Atomically thin heterostructures based on single-layer tungsten diselenide and graphene YC Lin, CYS Chang, RK Ghosh, J Li, H Zhu, R Addou, B Diaconescu, ... Nano letters 14 (12), 6936-6941, 2014 | 186 | 2014 |
| Monolayer transition metal dichalcogenide channel-based tunnel transistor RK Ghosh, S Mahapatra IEEE Journal of the electron devices society 1 (10), 175-180, 2013 | 117 | 2013 |
| Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ... 2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016 | 65 | 2016 |
| Two-dimensional tantalum disulfide: controlling structure and properties via synthesis R Zhao, B Grisafe, RK Ghosh, S Holoviak, B Wang, K Wang, N Briggs, ... 2D Materials 5 (2), 025001, 2018 | 49 | 2018 |
| Germanane: A low effective mass and high bandgap 2-D channel material for future FETs RK Ghosh, M Brahma, S Mahapatra IEEE Transactions on Electron Devices 61 (7), 2309-2315, 2014 | 48 | 2014 |
| Fundamental mechanism behind volatile and non-volatile switching in metallic conducting bridge RAM N Shukla, RK Ghosh, B Grisafe, S Datta 2017 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2017 | 40 | 2017 |
| Performance Analysis of Strained MonolayerMOSFET A Sengupta, RK Ghosh, S Mahapatra IEEE transactions on electron devices 60 (9), 2782-2787, 2013 | 40 | 2013 |
| Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ... IEEE Transactions on Electron Devices 64 (10), 4354-4362, 2017 | 39 | 2017 |
| Intrinsic spin-dynamical properties of two-dimensional half-metallic ( = Cl, Br, I) ferromagnets: Insight from density functional theory calculations RK Ghosh, A Jose, G Kumari Physical Review B 103 (5), 054409, 2021 | 34 | 2021 |
| Direct Band-to-Band Tunneling in Reverse BiasedNanoribbon p-n Junctions RK Ghosh, S Mahapatra IEEE transactions on electron devices 60 (1), 274-279, 2012 | 33 | 2012 |
| Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6and Ge/Ge0.93Sn0.07hetero-junction tunnel FETs R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ... 2016 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2016 | 32 | 2016 |
| First-principles calculation of shift current bulk photovoltaic effect in two-dimensional α- RP Tiwari, B Birajdar, RK Ghosh Physical Review B 101 (23), 235448, 2020 | 27 | 2020 |
| Investigation of room temperature ferromagnetism in transition metal doped BiFeO3 V Sharma, RK Ghosh, BK Kuanr Journal of Physics: Condensed Matter 31 (39), 395802, 2019 | 22 | 2019 |
| Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance R Zhao, CL Lo, F Zhang, RK Ghosh, T Knobloch, M Terrones, Z Chen, ... Advanced Materials Interfaces 6 (22), 1901055, 2019 | 20 | 2019 |
| Electrically triggered insulator-to-metal phase transition in two-dimensional (2D) heterostructures B Grisafe, R Zhao, RK Ghosh, JA Robinson, S Datta Applied Physics Letters 113 (14), 2018 | 20 | 2018 |
| Strain engineering of ferroelectric KNbO3 for bulk photovoltaic applications: an insight from density functional theory calculations RP Tiwari, B Birajdar, RK Ghosh Journal of Physics: Condensed Matter 31 (50), 505502, 2019 | 19 | 2019 |
| Proposal for graphene–boron nitride heterobilayer-based tunnel FET RK Ghosh, S Mahapatra IEEE transactions on nanotechnology 12 (5), 665-667, 2013 | 16 | 2013 |
| Stabilizing the commensurate charge-density wave in 1T-tantalum disulfide at higher temperatures via potassium intercalation R Zhao, B Grisafe, RK Ghosh, K Wang, S Datta, J Robinson Nanoscale 11 (13), 6016-6022, 2019 | 13 | 2019 |
Suman DattaJoseph M. Pettit Chair Professor在 gatech.edu 的电子邮件经过验证
